Highly Robust 130 nm SiGe BiCMOS Power Limiter, LNA and Mixer IC for a Wideband 1.5 - 18 GHz MIMO Radar Receiver

Sakalas, Mantas; Joram, Niko; Ellinger, Frank

doi:10.1109/mwsym.2019.8700899

Cited by 4 publications

(1 citation statement)

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“…A number of active mixers have been reported so far in various topologies and processes for different applications. SiGe-based heterojunction bipolar transistor (HBT) mixers [1,2], SiGe-based BiCMOS mixers [3,4,5,6,7], CMOS-based mixers [8,9,10,11] and mixers based on InP HBT technology [12,13,14,15] were presented. Particularly, InP double heterojunction bipolar transistor (DHBT) has the advantages of outstanding high frequency performance, high electron mobility and high breakdown voltage [16,17], which indicates that InP DHBT is an attractive choice for wideband mixers.…”

Section: Introductionmentioning

confidence: 99%

A wideband InP Gilbert-cell mixer using capacitive degeneration and current bleeding technique

Zhen

Cao

et al. 2021

IEICE Electron. Express

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This letter presents a wideband and high conversion gain mixer based on Gilbert-cell in InP DHBT process. Capacitive degeneration is introduced to increase the bandwidth of the mixer with no voltage drop and few cost of area. Current bleeding technique is employed to improve conversion gain. Utilization of device f t is analyzed to achieve 0.919. The measurement demonstrates a conversion gain of 14.5 dB at 26 GHz with -3 dB bandwidth of 49 GHz. BW/ f t of 0.306 and GBP of 260 GHz are obtained, which are believed to be among the best compared to mixers fabricated with the same size process.

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Section: Introductionmentioning

confidence: 99%

A wideband InP Gilbert-cell mixer using capacitive degeneration and current bleeding technique

Zhen

Cao

et al. 2021

IEICE Electron. Express

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A 1.5–40 GHz frequency modulated continuous wave radar receiver front-end

Sakalas

Joram

Ellinger

2021

Int. J. Microw. Wireless Technol.

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This study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$ .

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