Highly responsive self-driven broadband photodetector based on MoS2 nanorods/β-Ga2O3 heterojunction

A nanoflower-like GaSe/β-Ga2O3 based heterostructure for highly efficient self-powered broadband photodetectors

“…[7][8][9][10] Specifically, b-Ga 2 O 3 is suitable for solar-blind photodetection devices because of its excellent thermal conductivity, high melting point, thermal and chemical stability, and significant breakdown voltage. 1,[11][12][13][14] But b-Ga 2 O 3 -based devices still need improvement in their dark current, photoresponsivity, response speed, EQE, and detectivity for practical applications. Arguably, an effective method is to create an appropriate heterostructure that allows charge carriers to separate easily and move at the depletion region interface.…”

Brain-inspired computing: can 2D materials bridge the gap between biological and artificial neural networks?

“…Recently, two-dimensional (2D) materials have been actively deployed to fabricate various electronic and optoelectronic devices. 33–42 Their high charge carrier mobility, 43–45 band gap tunability, 46 high light absorption coefficient, 40,45 ease of heterojunction formation, 47 and high surface-to-volume ratios 48 make them promising candidates for realizing RS memory and other neuromorphic circuit elements. 10,12,49 Furthermore, van der Waals (vdW) heterojunctions synthesized by stacking two or more 2D layered materials (2DLMs) not only retain the properties of the individual 2D materials, but also exhibit more intriguing properties than the respective counterparts.…”