2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS) 2014
DOI: 10.1109/memsys.2014.6765589
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Highly responsive curved aluminum nitride pMUT

Abstract: We have successfully demonstrated highly responsive, curved piezoelectric micromachined ultrasonic transducers (pMUTs) based on a CMOS-compatible fabrication process using AlN (aluminum nitride) as the transduction material. Micro fabrication techniques have been used to control the radius of curvature of working diaphragms from 400~2000 μm and theoretical analysis have been developed for the optimal dimensions of the transducers to boost the electromechanical coupling and acoustic pressure. A prototype device… Show more

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Cited by 55 publications
(25 citation statements)
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References 7 publications
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“…Therefore, the zero-bending pMUT is proven to perform much better than the reference pMUT, with enhanced transmitting sensitivity of more than 450% of the reference pMUT. Compared to recently reported AlN pMUT with similar size [5], which even employs 3-D coupling mechanism for highly response purpose, transmitting sensitivity of the zero-bending pMUT is much better to it (45 nm / V).…”
Section: Figure 5: (A) A-a' View Of 1-d Surface Profiles And; (B) 3-dmentioning
confidence: 79%
“…Therefore, the zero-bending pMUT is proven to perform much better than the reference pMUT, with enhanced transmitting sensitivity of more than 450% of the reference pMUT. Compared to recently reported AlN pMUT with similar size [5], which even employs 3-D coupling mechanism for highly response purpose, transmitting sensitivity of the zero-bending pMUT is much better to it (45 nm / V).…”
Section: Figure 5: (A) A-a' View Of 1-d Surface Profiles And; (B) 3-dmentioning
confidence: 79%
“…AlN and PZT are dominant piezoelectric materials in pMUT fabrication. AlN films for pMUTs are typically deposited by sputtering with a thickness of 0.7–2 μm [ 124 , 125 , 126 ]. High residual stress and low deposition rate (less than 25 nm/min) are the limiting factors of sputtering AlN thin films [ 127 ].…”
Section: Pmuts and Their Endoscopic Pai Applicationsmentioning
confidence: 99%
“…In 2014, Akhbari et al presented an AlN pMUT based on a curved diaphragm with a diameter of 140 μm and a radius of curvature of 1065 μm, showing a 50 times higher DC transmission sensitivity than that of a planar device with the same dimension [ 126 ] ( Figure 24 a). In 2015, the same group also proposed a bimorph AlN pMUT that had two 0.95 μm thick AlN layers sandwiched by three Mo electrodes, showing a four times higher central displacement sensitivity than that of a unimorph AlN pMUT under similar actuation conditions [ 149 , 150 ] ( Figure 24 b).…”
Section: Pmuts and Their Endoscopic Pai Applicationsmentioning
confidence: 99%
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“…The PMUT provides different benefits compared to CMUT including (i) relatively higher capacitance as compared to CMUT, (ii) does not require high polarization voltage, and (iii) has a compatible matching impedance with sample [ 91 , 92 , 93 ]. Several types of PMUT-based US transducers are widely used for biomedical applications, such as the catheter type, dome-shape array, and concave array type [ 94 , 95 , 96 ]. W. Liao et al first reported the two-dimensional PMUT array with 144 elements for the PAI [ 97 ] system.…”
Section: Micromachined Us Detector For Paimentioning
confidence: 99%