Highly responsive broadband photodetection in topological insulator - Carbon nanotubes based heterostructure

Bhattacharyya, Biplab; Sharma, Alka; Kaur, Mandeep; Singh, Bheem; Husale, Sudhir

doi:10.1016/j.jallcom.2020.156759

Cited by 16 publications

(8 citation statements)

References 46 publications

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“…However, this also shows the broad band nature of the fabricated structures due to the addition of SWNT in both the samples. Similar interesting reports on broadband photodetection based on CNT composites have also been reported earlier 63,64 . On such, several authors have also reported the broad band nature of SWNTs [65][66][67] .…”

Section: Optical Analysis Uv-vis Absorption Analysis Uv-vis-nir Absor...supporting

confidence: 87%

Acid-modified CNT/Zinc Oxide nanowires based high performance broadband photodetector

Aier

Dhar

2023

Sci Rep

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In this study, the authors have reported the impact of post-treatment via exposure to acid on single walled carbon nanotubes (SWNTs) thin film (TF) based SWNT/ZnO Nanowire (NW) broad band photodetector. The ZnO NWs were deposited on SWNT (with and without acid-treated) using a simple catalytic free process called glancing angle deposition (GLAD) technique. Acid-treated SWNT samples warranted the growth of high quality ZnO NWs over them. On fabricating photodetectors with the acid-treated ZnO NW/SWNT TF heterostructure (HS) gave better device performance as compared to the as-deposited ZnO NW/SWNT TF HS (without acid-treatment) sample. The acid-treated device showed a large responsivity (85.45 A/W), specific detectivity (0.859 × 1012 Jones) and with a low noise equivalent power of 3.9101 pW values. Moreover, the oxygen adsorption–desorption mechanism in SWNTs impacted the electrical resistance of the nanotubes which affected nanotube conductivity. The acid-treatment favoured relatively faster charge separation at the ZnO NW/SWNT heterojunction thus providing a fast device response (trise = 0.11 s, tfall = 0.39 s at + 5 V). The fabricated acid-treated device showed good broad band detection (250 nm-750 nm) which was explained with respect to the optical absorption profile of the sample.

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Section: Optical Analysis Uv-vis Absorption Analysis Uv-vis-nir Absor...supporting

confidence: 87%

Acid-modified CNT/Zinc Oxide nanowires based high performance broadband photodetector

Aier

Dhar

2023

Sci Rep

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“…A thin layer of TI is predicated as a promising material for high performing optoelectronic devices ranging from terahertz (THz) to infrared detections and applications include high speed optical communications, terahertz lasers and photodetectors, surveillance, remote sensing, thermal detection, waveguide etc 23 . Hence TI based materials have emerged as an excellent material reported for broadband (UV to NIR) 24 – 29 , visible to mid infrared (3.8 μm) 30 , deep UV to MIR 3 photodetections. TI is also reported as a transparent conductor for infrared wavelength 7 , 31 which is better when compared with ITO (indium tin oxide) films that show poor performance during infrared sensing and imaging applications.…”

Section: Introductionmentioning

confidence: 99%

High performing flexible optoelectronic devices using thin films of topological insulator

Pandey

Yadav

Kaur

et al. 2021

Sci Rep

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Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

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“…Broadband photodetectors are made of potential materials, whose conductivity can be changed by incident light such as UV, visible, or IR light; they have photoabsorbance over a wide range of wavelengths, high photosensitivity, high carrier mobility, high conservation efficiency, operability at a low voltage, and long operational stability [30,31]. Photon-electron transfer is the primary detection mechanism of photodetectors [32].…”

Section: Introductionmentioning

confidence: 99%

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

2021

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Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10−2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi2Se3. FPA–FTIR reveals that the optical bandgap of doped Bi2Se3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi2Se3. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi2Se3 under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10−10 and 0.35 × 10−10 A and high Iphoto/Idark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10−2 and 6.6 × 10−2 s. Under UV light, (In,Sn)-dopedBi2Se3 had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi2Se3, indicating that (In,Sn)-doped Bi2Se3 exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi2Se3 under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi2Se3 has greater potential than undoped Bi2Se3 for use in UV and red-light photodetectors.

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Highly responsive broadband photodetection in topological insulator - Carbon nanotubes based heterostructure

Cited by 16 publications

References 46 publications

Acid-modified CNT/Zinc Oxide nanowires based high performance broadband photodetector

Acid-modified CNT/Zinc Oxide nanowires based high performance broadband photodetector

High performing flexible optoelectronic devices using thin films of topological insulator

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

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