Highly reliable vertical NAND technology with biconcave shaped storage layer and leakage controllable offset structure

Cho, Won-seok; Shim, Sun Il; Jang, Jae Hoon; Cho, Hoosung; You, Byoung-Koan; Son, Byoungkeun; Kım, Kihyun; Shim, Jae-Joo; Park, Choul-min; Lim, Jin-soo; Kim, Kyoung-Hoon; Chung, De-will; Lim, Ju Young; Moon, Hokyu; Hwang, Sungmin; Lim, Hongil; Kim, Han‐Soo; Choi, Jaehyuk; Chung, Chilhee

doi:10.1109/vlsit.2010.5556216

Cited by 32 publications

(18 citation statements)

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“…The gate-last process of TCAT cells results in a biconcave memory cell shape, which reduces the charge spreading issue. Indeed, in BiCS architectures, since the trapping layer is electrically connected in a continuous way along the channel side, there is a significant charge spreading path resulting in potential reliability issues [28]. …”

Section: Tcat Architecturementioning

confidence: 99%

Architectural and Integration Options for 3D NAND Flash Memories

Micheloni

Crippa²,

Zambelli

et al. 2017

Computers

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Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in consumer and enterprise scenarios. To keep the evolutionary pace of the technology, NAND Flash must scale aggressively in terms of bit cost. When approaching ultra-scaled technologies, planar NAND is hitting a wall: both academia researchers and industry worked to cope with this issue for several decades. Then, the 3D integration approach turned out to be the definitive alternative by eventually reaching mass production. This review paper exposes several 3D NAND Flash memory technologies, along with their related integration challenges, by showing their different layouts, scaling trends and performance/reliability features.

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Section: Tcat Architecturementioning

confidence: 99%

Architectural and Integration Options for 3D NAND Flash Memories

Micheloni

Crippa²,

Zambelli

et al. 2017

Computers

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show abstract

“…2, this causes degradation of data retention characteristics. Thanks to the biconcave shape of the charge trap layer, in the TCAT case it is harder for electrical charges to move from one cell to another, as there is not straight connection of the charge trap layers between them [18]. …”

Section: Vsat and A-vsatmentioning

confidence: 99%

3D Charge Trap NAND Flash Memories

Crippa¹,

Micheloni²

2016

3D Flash Memories

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“…Typical P/E window of TCAT Cho et al 2010). Similar to BiCS, smaller radius helps to create larger memory window due to the field enhancement effect.…”

Section: Fig 419mentioning

confidence: 99%

3D NAND Flash Architectures

Lue

2015

Charge-Trapping Non-Volatile Memories

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Highly reliable vertical NAND technology with biconcave shaped storage layer and leakage controllable offset structure

Cited by 32 publications

References 0 publications

Architectural and Integration Options for 3D NAND Flash Memories

Architectural and Integration Options for 3D NAND Flash Memories

3D Charge Trap NAND Flash Memories

3D NAND Flash Architectures

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