Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

Abstract

Highly reconfigurable logic-in-memory (LIM) cells based on emerging HfO 2doped ferroelectric (FE) memory with multiple polarization states have received extensive attention in overcoming the bottleneck of a von Neumann architecture with flexible and efficient computing ability. However, the variation of polarization states in device-to-device (D2D) and cycle-to-cycle (C2C) caused by partial polarization switching seriously plagues the large-scale integration of LIM based on multistate FE memory. Here, a highly reliable reconfigurable LIM with parallel computing capability is proposed based on an indium-gallium-zinc-oxide (IGZO)modulated multistate antiferroelectric (AFE) nonvolatile memory (NVM) with complete switching of different polarization states. The nonvolatile multiple polarization states of the AFE NVM are realized by introducing the bidirectional transformation of a built-in electric field in the memory, which is modulated by the accumulation or depletion of IGZO insertion layers between the electrodes and the AFE layer. The improved variation of C2C and D2D benefited from a nonoverlapping multiple coercive electric field (E c ) distribution and step-by-step polarization switching in AFE memory. Based on the proposed multistate AFE NVM, 2 logical operations are executed in parallel and 16 Boolean logic functions are constructed, including the 14 Boolean logic functions realized by a single device in 2 steps and the other 2 Boolean logic function realized by two devices in 4 steps. In addition, a 1-bit binary full subtractor and full adder can be realized efficiently using the multistate AFE NVM in parallel by fewer devices and operation steps, indicating that the AFE NVM is promising for developing larger scale efficient LIM with high reliability.