Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe₂ Insertion Layer

Abstract

Electrochemical metallization threshold switch (ECM TS) has received significant attention for various applications owing to its high ON/OFF ratio, fast switching characteristics, and simple active electrode/dielectric layer/inert electrode structures. However, the excess diffusion of active metal ions causes severe variation in threshold voltage and poor endurance. Furthermore, the small room for inert electrode metal is a problem to be solved for various applications of ECM TS. Here, a novel structure is proposed in which a two‐dimensional platinum diselenide (PtSe2) is inserted between the dielectric layer and inert electrode to engineer the conductive filament by controlling the active metal ion concentration. The low work function, superior inertness, layered structure, and smooth surface of PtSe2 insertion layer lead to thin and weak conductive filament with few active metal atoms and allow the use of various metals as inert electrode. Consequently, PtSe2‐inserted ECM TS shows high reliability in both threshold voltage distribution (σ/µ = ≈6.58%) and endurance (>106 cycles). Furthermore, PtSe2‐inserted ECM TS‐based 2 × 2 cross‐bar array is proposed as AND and OR logic circuits. This study is expected to pave the way for the development of ECM TS for next‐generation electronic applications.

All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

“…This enables an atomically sharp transition between the two materials and essentially forbids Fermi level pinning. Such an interface is in contrast to conventional evaporated electrodes where the metal-induced gap states as well as defect-induced gap states deteriorate the contact properties and increase the carrier injection barrier. , Our TLM and device fitting estimates indicate that graphite electrodes provide a similar low contact resistance junction even with the thicker PtSe 2 devices due to a minor change in the work function of PtSe 2 with respect to the change in number of layers: an increase of approximately 10 meV for an increase in thickness from 2 to 5 nm. − …”

Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing

“…Kumar et al 45 reported that vertically grown WS 2 , consisting of a ZnO layer-based memristor, exhibits a remarkable tunable dynamic range, accompanied by comprehensive synaptic functions. Kim et al 46 introduced an innovative approach by incorporating 2D platinum diselenide (PtSe 2 ) to engineer a thin and stable conductive filament; this resulted in high reliability, low-threshold voltage distribution (σ/μ ≈ 6.58%), and endurance (>10 6 cycles) in PtSe 2 -inserted ECM TS. Xue et al 47 introduced a multifunctional memristor featuring an Ag/combustion zinc oxide/W structure, demonstrating reliable digital resistive switching and biological synaptic behaviors like short/long-term plasticity.…”