Highly Reliable, Cost-effective and Temperature-stable Top-illuminated Avalanche Photodiode (APD) for 100G Inter-Datacenter ER4-Lite Applications

Nanoscale III-V Semiconductor Photodetectors for High-Speed Optical Communications

“…In this case, the dark current is estimated to be about 12.1 nA at 20°C. Figure 3 shows the typical reverse IV of a 25G mesa-type SACM APD photodetector [38]. On the IV curve, there are two transitions along the reverse voltage that occur at 3 and 26 V, respectively.…”

“…(1). The reverse IV curve of the 25G mesa-type APD photodetector where the first transition is related to the punchthrough (V pt ) and the second related to the avalanche breakdown (V br ) [38].…”

“…The short failure can be correlated with the metal shorting that shunts between the top InGaAs contact layer and the InAlAs multiplication layer, punching through Figure 12. Schematic of electrical and optical overload stress applied to the APD for both burst and CW modes [38].…”

“…Damage threshold No failure up to +4 dBm No failure up to +1 dBm Table 4. Damage threshold of optical and electrical overload stresses of 25G APD for burst and CW modes [38].…”

“…Regarding geometry inhomogeneity, the surface leakage from mesa structure is expected to be similar from design standpoint. With careful processing control, the dark current of modern mesa-type APD devices can be confined within a few tens of nanoampere [23,38]. Table 5.…”