Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-Perot lasers, operating at 10-gb/s, up to 110/spl deg/C, with constant current swing

Paoletti, R.; Agresti, M.; Bertone, D.; Bianco, L.; Bruschi, C.; Buccieri, A.; Campi, Roberta; Dorigoni, C.; Gotta, P.; Liotti, M.; Magnetti, G.; Montangero, P.; Morello, G.; Rigo, C.; Riva, E.; Rossi, Gemma Caterina Maria; Söderström, D.; Stano, A.; Valenti, P.; Vallone, Marco; Meliga, M.

doi:10.1109/jlt.2005.861128

Cited by 20 publications

(4 citation statements)

References 14 publications

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“…For the short-cavity-length LDs, the available light output power degraded by the thermal heating effect would become severe because a higher current density is required to compensate for the lower round-trip gain and the increased mirror loss of LDs. 15 Further improving the device characteristics can be achieved by using the AlGaInAs-based MQWs with a larger ⌬E c to provide a stronger carrier confinement 16 or by using a high reflectivity ͑HR͒ facet coating to reduce the mirror loss of LDs. Otherwise, an additional leakage current caused by the interdiffusion between the Zn-doped InP layer and the Fe-doped semi-insulating layer also contributes to the saturation of light output power at high current injections.…”

Section: Resultsmentioning

confidence: 99%

1.3 μm Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications

Tsai

Chou

Wang

et al. 2009

J. Electrochem. Soc.

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In this paper, we report on the realization of the 1.3 μm strain-compensated InGaAsP buried heterostructure (BH) laser diodes (LDs) by using an Fe-doped semi-insulating InP layer. The performances of LDs are characterized by light output power, internal quantum efficiency, modal gain, characteristic temperature (T0) , and dynamic response. As a result of the good confinement of the injection carriers within the strained-compensated multiple quantum well (SC-MQW) and the better heat sink for thermal dissipation, the BH LDs exhibit a threshold current of 9 mA, a slope efficiency of 0.296 mW/mA, and a maximum light output power of 11.8 mW/facet at 76 mA. Besides, the transparent current density and modal gain are estimated as 106A∕cm2 and 12.5cm−1 , respectively, for the fabricated LDs. Otherwise, the BH LD with a facet coating is beneficial to get a lower threshold current, a higher light output power, and an improved T0 value as compared to the conventional ridge-waveguide LD. Furthermore, this transistor outlook (TO)-packaged BH LD for small-signal analyses does not show any parasitic effects at low frequencies and has a maximum modulation frequency of 9.6 GHz at 80 mA. Finally, the BH LD also exhibits the promising potential for high speed data transmission as evaluated from the 10 Gb/s eye-opening feature. These results imply that the 1.3 μm TO-packaged SC-MQW InGaAsP LDs are excellent candidates for use in high speed optical fiber communications.

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Section: Resultsmentioning

confidence: 99%

1.3 μm Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications

Tsai

Chou

Wang

et al. 2009

J. Electrochem. Soc.

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“…Table 5 compares some most important parameters for uncooled operation from the best reported 1.3 µm InAs QD lasers on GaAs 37 and InGaAsP QW lasers on InP 38. It is interesting to note that our GaInNAs QW lasers contain only 2–3 QWs and no high reflectivity (HR) is used, showing a great potential of the 1.3 µm dilute nitride lasers.…”

Section: 13 µM Gainnas Edge Emitting Lasersmentioning

confidence: 99%

Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE

Wang

Adolfsson

Zhao

et al. 2011

Physica Status Solidi (b)

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In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mm lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mm at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mm GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 8C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.

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“…In the past few years, long-wavelength MQW lasers made of InGaAlAs/InP have gained increasing interest as compared to those with the more conventionally used InGaAsP/InP due to various superior characteristics exhibited by the InGaAlAs/InP material system [1][2][3][4]. To date, a number of InGaAlAs/InP MQW lasers with promising performance had been reported [5][6][7]. These MQW lasers are typically designed to have low threshold current I th , high slope efficiency SE (hence the quantum efficiency), and high characteristic temperature T 0 .…”

Section: Introductionmentioning

confidence: 99%

Separate confinement heterostructure design for InGaAlAs/InP multiple-quantum-well lasers: critical analysis and proposal of novel design

et al. 2010

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A thorough analysis on the separate confinement heterostructure (SCH) designed for 1.5-μm InGaAlAs/InP multiplequantum-well (MQW) lasers is presented. Simulation results show that the enhancement rates of the threshold current and the slope efficiency of graded-index SCH (GRINSCH) drop with the increasing number of graded layers. Hence, requirement on truly graded structure may be relieved, which eases the growth process and reduces the cost. The thickness of the GRINSCH has a profound impact on the laser's performance, whereby over 25 mA reduction in threshold current was deducible by optimizing this design parameter alone. The grading energy range of the GRINSCH is found to effectively reduce the carrier leakage at elevated temperature, resulting in improved threshold current's sensitivity to the temperature. However, the increased GRINSCH energy barrier may also bring detrimental effect to the slope efficiency. To overcome this problem, a non-symmetrical SCH (NS-SCH) structure with reduced n-SCH energy barrier is proposed. Simulation results show that laser structure with NS-SCH design has better light-current performance than the laser structure with electron stopper layer. The laser structure with NS-SCH exhibits 20% decrease in threshold current and 43% increase of maximum output power as compared to those of the reference laser structure.

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Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-Perot lasers, operating at 10-gb/s, up to 110/spl deg/C, with constant current swing

Cited by 20 publications

References 14 publications

1.3 μm Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications

1.3 μm Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications

Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE

Separate confinement heterostructure design for InGaAlAs/InP multiple-quantum-well lasers: critical analysis and proposal of novel design

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