Highly productive solvothermal synthesis of hexagonal Sb<sub>2</sub>Te<sub>3</sub>fine-platelets using solution with high precursor concentration and added glucose

Takahashi, Momoko; Asahara, Kenta; Wada, Kodai; Takashiri, Masayuki

doi:10.7567/1347-4065/ab0644

Cited by 6 publications

(3 citation statements)

References 37 publications

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“…The columnar crystals were presumably formed by Te, and a similar phenomenon was observed in previous reports. [39,40] Thus, because of the appearance of nucleus creation and phase change in the grown crystals at 25 and 30 min, detailed structural analyses will be presented using TEM in a later section. When the synthesis time was increased to 60 min (Figure 5c), the size of the nanoplates was expanded to over 500 nm.…”

Section: Crystal Growth With Changing Synthesis Timementioning

confidence: 99%

Investigation of Phase Transition from Critical Nucleus to Bi₂Te₃ Nanoplate Based on Screw Dislocation‐Driven Spiral Growth by Solvothermal Synthesis

Yamazaki

Eguchi

Takashiri

2021

Crystal Research and Technology

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Two-dimensional bismuth telluride (Bi 2 Te 3 ) nanoplates have great potential for thermoelectrics and topological insulators. The material performance increases as the nanoplate size decreases. However, the initial stage of the crystal growth of the nanoplates has not been significantly investigated. The Bi 2 Te 3 nanoplates are prepared by solvothermal synthesis and the phase transition based on the screw dislocation-driven spiral growth of the nanoplates is investigated. The optimal synthesis conditions are first determined by controlling the Te concentration in the precursor solution. The spiral-grown nanoplates are collected from the synthesized products. The diameter of the critical nucleus is calculated to be in the range of 5.0-7.2 nm from the step width in the spiral. Subsequently, the solvothermal synthesis is implemented by changing the synthesis time from 15 to 1200 min under the optimal conditions of the precursor solution. Crystals are not grown in the solution at 15 min. At 25 min, an intermediate phase of Bi 2 TeO 5 with an approximate grain size of 5.0 nm is formed, which corresponds to the calculated diameter of the critical nucleus. Another intermediate phase of Te is formed, and the Bi 2 Te 3 nanoplates with a lateral size of 300 nm grow slowly at the expense of Bi 2 TeO 5 and Te.

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Section: Crystal Growth With Changing Synthesis Timementioning

confidence: 99%

Investigation of Phase Transition from Critical Nucleus to Bi₂Te₃ Nanoplate Based on Screw Dislocation‐Driven Spiral Growth by Solvothermal Synthesis

Yamazaki

Eguchi

Takashiri

2021

Crystal Research and Technology

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“…15,16) Meanwhile, the bismuth-telluride family of compounds, including Bi 2 Te 3 , Sb 2 Te 3 , and their ternary alloys, exhibit nanoplate formation by self-organization in a solution process. [17][18][19] Furthermore, these compounds exhibit the highest thermoelectric performance near 300 K. 20) As regards thermoelectric-material nanoplate fabrication and thermal-property measurements, Dong et al fabricated Sb 2 Te 3 nanoplates using microwave-assisted rapid synthesis and measured the thermal conductivity and other thermoelectric properties of bulk samples prepared by spark plasma sintering. 15) Moreover, Soni et al fabricated Bi 2 Te 2.7 Se 0.3 nanoplates using a polyol synthesis method and measured the properties of bulk samples prepared by spark plasma sintering.…”

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confidence: 99%

Measurement of thermal boundary resistance and thermal conductivity of single-crystalline Bi₂Te₃ nanoplate films by differential 3ω method

Mori

Norimasa

Kurokawa

et al. 2020

Appl. Phys. Express

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We measured the thermal boundary resistance (TBR) and thermal conductivity of single-crystalline Bi2Te3 nanoplate films. The nanoplates were synthesized using the solvothermal method, and nanoplate films were formed using drop-casting followed by thermal annealing. The thermal resistance of nanoplate films of different thicknesses was measured by the application of a differential 3ω method. From the measured thermal resistance, the TBR was estimated to be 2.7 × 10−6 m2 K W−1. To negate the effect of TBR on the measured thermal resistance of the nanoplate films, we separately determined the thermal conductivity of the nanoplate film to be 1.57 ± 0.11 W m−1 K−1.

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“…In addition, these studies motivated us to investigate the thermoelectric properties of nanoplates while maintaining their shape. In our previous reports, we fabricated binary alloy nanoplates such as Bi 2 Te 3 and Sb 2 Te 3 using solvothermal synthesis and estimated their thermoelectric properties [30][31][32] .…”

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confidence: 99%

Solvothermal synthesis of n-type Bi2(SexTe1−x)3 nanoplates for high-performance thermoelectric thin films on flexible substrates

Kimura

Mori

Yonezawa

et al. 2020

Sci Rep

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To improve thermoelectric performance of materials, the utilization of low-dimensional materials with a multi-alloy system is a promising approach. We report on the enhanced thermoelectric properties of n-type Bi 2 (Se x te 1−x) 3 nanoplates using solvothermal synthesis by tuning the composition of selenium (Se). Variation of the Se composition within nanoplates is demonstrated using X-ray diffraction and electron probe microanalysis. The calculated lattice parameters closely followed Vegard's law. However, when the Se composition was extremely high, an impurity phase was observed. At a reduced Se composition, regular-hexagonal-shaped nanoplates with a size of approximately 500 nm were produced. When the Se composition was increased, the shape distribution became random with sizes more than 5 μm. To measure the thermoelectric properties, nanoplate thin films (NPTs) were formed on a flexible substrate using drop-casting, followed by thermal annealing. The resulting NPTs sufficiently adhered to the substrate during the bending condition. The electrical conductivity of the NPTs increased with an increase in the Se composition, but it rapidly decreased at an extremely high Se composition because of the presence of the impurity phase. As a result, the Bi 2 (Se x te 1−x) 3 NPTs exhibited the highest power factor of 4.1 μW/(cm•K 2) at a Se composition of x = 0.75. Therefore, it was demonstrated that the thermoelectric performance of Bi 2 (Se x te 1−x) 3 nanoplates can be improved by tuning the Se composition. With the development of information technology including the Internet of things (IoT), the importance of thermoelectric materials that form flexible thin films has increased. This is because thermoelectric materials can directly convert thermal energy to electrical energy and vice versa. The electrical energy generated from the thermal energy via the Seebeck effect can be used to power wireless and wearable sensors 1-4. The thermal energy produced from electrical energy via the Peltier effect can be used to cool electronic devices 5-7. In both cases, the energy conversion efficiency depends on the dimensionless figure-of-merit ZT, defined as ZT = S 2 σT/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, and T is the absolute temperature. In addition, the power factor PF defined by PF = S 2 σ is an important material property. Among thermoelectric materials, bismuth telluride-based alloys which were developed in the 1950s are the most suitable materials for application to IoT technology 8-10. This is because they exhibit the highest thermoelectric properties near 300 K. At this temperature, thermoelectric materials can be used as both thermoelectric generators and Peltier coolers. In particular, ternary alloys such as Bi 2 (Se x Te 1-x) 3 are known to exhibit superior performance compared to binary alloys such as Bi 2 Te 3 and Bi 2 Se 3 11-14. Bismuth telluride-based alloys including binary and ternary alloys commonly have rhombohedral tetradymite-type crystal str...

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Highly productive solvothermal synthesis of hexagonal Sb₂Te₃fine-platelets using solution with high precursor concentration and added glucose

Cited by 6 publications

References 37 publications

Investigation of Phase Transition from Critical Nucleus to Bi₂Te₃ Nanoplate Based on Screw Dislocation‐Driven Spiral Growth by Solvothermal Synthesis

Investigation of Phase Transition from Critical Nucleus to Bi₂Te₃ Nanoplate Based on Screw Dislocation‐Driven Spiral Growth by Solvothermal Synthesis

Measurement of thermal boundary resistance and thermal conductivity of single-crystalline Bi₂Te₃ nanoplate films by differential 3ω method

Solvothermal synthesis of n-type Bi2(SexTe1−x)3 nanoplates for high-performance thermoelectric thin films on flexible substrates

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Highly productive solvothermal synthesis of hexagonal Sb2Te3fine-platelets using solution with high precursor concentration and added glucose

Cited by 6 publications

References 37 publications

Investigation of Phase Transition from Critical Nucleus to Bi2Te3 Nanoplate Based on Screw Dislocation‐Driven Spiral Growth by Solvothermal Synthesis

Investigation of Phase Transition from Critical Nucleus to Bi2Te3 Nanoplate Based on Screw Dislocation‐Driven Spiral Growth by Solvothermal Synthesis

Measurement of thermal boundary resistance and thermal conductivity of single-crystalline Bi2Te3 nanoplate films by differential 3ω method

Solvothermal synthesis of n-type Bi2(SexTe1−x)3 nanoplates for high-performance thermoelectric thin films on flexible substrates

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Highly productive solvothermal synthesis of hexagonal Sb₂Te₃fine-platelets using solution with high precursor concentration and added glucose

Investigation of Phase Transition from Critical Nucleus to Bi₂Te₃ Nanoplate Based on Screw Dislocation‐Driven Spiral Growth by Solvothermal Synthesis

Investigation of Phase Transition from Critical Nucleus to Bi₂Te₃ Nanoplate Based on Screw Dislocation‐Driven Spiral Growth by Solvothermal Synthesis

Measurement of thermal boundary resistance and thermal conductivity of single-crystalline Bi₂Te₃ nanoplate films by differential 3ω method