Highly oriented ZnO films obtained by d.c. reactive sputtering of a zinc target

Petrov, I.; Orlinov, V.; Misiuk, A.

doi:10.1016/0040-6090(84)90173-1

Cited by 58 publications

(19 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Later, the crystallites are oriented with their fastest growth (0 0 1) planes during film growth, thus leading to axial texture. Similar result has also been reported in other literature [25].…”

Section: Article In Presssupporting

confidence: 93%

Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films

Kuo¹,

Chen²,

Lai³

et al. 2006

Journal of Crystal Growth

365

112

View full text Add to dashboard Cite

Section: Article In Presssupporting

confidence: 93%

Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films

Kuo¹,

Chen²,

Lai³

et al. 2006

Journal of Crystal Growth

365

112

View full text Add to dashboard Cite

“…Transition region III where the chemical composition is changed could be seen. The existence of transition region between film and substrate can be explained by solid phase chemical reaction in the system ZnO/Si [24]. The existence of transition region was verified by photoluminescence study of ZnO films on sapphire.…”

Section: Pemocvd Deposition Of Piezoelectric and Transparent Electrocmentioning

confidence: 92%

Zinc oxide – analogue of GaN with new perspective possibilities

Karpina

Лазоренко

Lashkarev³

et al. 2004

Cryst. Res. Technol.

145

View full text Add to dashboard Cite

Zinc oxide due to specific electrical, optical and acoustic properties is the important semiconductor material, which has many various applications. There is growing interest in ZnO due to its potential applicability for optoelectronic devices such as light-emitting diodes, laser diodes and detectors for UV wavelength range. ZnO properties are very close to those of widely recognized semiconductor GaN. The band gap of ZnO (3.37 eV) is close to that of GaN (3.39 eV) but ZnO exciton binding energy (60 meV) is twice larger than that of GaN (28 meV). Optically pumped UV lasing have been demonstrated at room temperature using high textured ZnO films. The excitonic gain close to 300 cm -1 was achieved. ZnO thin films are expected to have higher quantum efficiency in UV semiconductor laser than GaN. The physical properties of ZnO are considered. PEMOCVD technology was used to deposit piezoelectric and highly transparent electroconductive ZnO films. Their properties are discussed. The experiments on polycrystalline ZnO films deposited by RF magnetron sputtering at different partial pressure of oxygen are presented. AFM images were studied in tapping mode for deposited films. The investigated films were dielectric ones and had optical transparency within 65-85% at thickness in the interval 0.2-0.6 µm.

show abstract

“…Negative ions have previously been shown to affect film properties during oxide sputtering, causing, e.g., film resputtering, stresses, and composition changes [20,21,22], and could consequently be important also in the present case. …”

Section: The Expected Diffraction Rings For α-Alumina [17] (A) and γ-mentioning

confidence: 89%

Influence of residual water on magnetron sputter deposited crystalline Al2O3 thin films

et al. 2008

View full text Add to dashboard Cite

The effects of residual water on the phase formation, composition, and microstructure evolution of magnetron sputter deposited crystalline alumina thin films have been investigated. To mimic different vacuum conditions, depositions have been carried out with varying partial pressures of H 2 O. Films have been grown both with and without chromia nucleation layers. It is shown that films deposited onto chromia nucleation layers at relatively low temperatures (500 °C) consists of crystalline α-alumina if deposited at a low enough total pressure under ultra high vacuum (UHV) conditions. However, as water was introduced a gradual increase of the γ phase content in the film with increasing film thickness was observed. At the same time, the microstructure changed drastically from a dense columnar structure to a structure with small, equiaxed grains. Based on mass spectrometry measurements and previous ab initio calculations, we suggest that either bombardment of energetic negative (or later neutralized) species being accelerated over the target sheath voltage, adsorbed hydrogen on growth surfaces, or a combination of these effects, is responsible for the change in structure. For films containing the metastable γ phase under UHV conditions, no influence of residual water on the phase content was observed. The amounts of hydrogen incorporated into the * Corresponding author. Tel.: +46 13 281878; fax: +46 13 288918. E-mail address: eriwa@ifm.liu.se (E. Wallin). † Present address: Seco Tools AB, SE-737 82 Fagersta, Sweden. 2 films, as determined by elastic recoil detection analysis, were shown to be low. Overall, the results demonstrate that residual water present during film growth drastically affects film properties, also in cases where the hydrogen incorporation is found to be low.

show abstract

Highly oriented ZnO films obtained by d.c. reactive sputtering of a zinc target

Cited by 58 publications

References 40 publications

Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films

Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films

Zinc oxide – analogue of GaN with new perspective possibilities

Influence of residual water on magnetron sputter deposited crystalline Al2O3 thin films

Contact Info

Product

Resources

About