Highly oriented ta2o5 piezoelectric thin films prepared by rf-magnetron sputtering

Kakio, Shoji; Mitsui, Takeshi; Tsuchiya, Akinori; Nakagawa, Yasuhiko

doi:10.1109/ultsym.2009.5441475

Cited by 1 publication

(4 citation statements)

References 8 publications

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“…These diffraction patterns resembled each other and were similar to those of X-axis-oriented Ta 2 O 5 thin films in our previous report. 24,25) For A1, B1, and C1 samples, a gentle diffraction peak appeared at a diffraction angle lower than that for the preferential Ta 2 O 5 (200) plane. This means that a plane spacing larger than d (200) also exists in the deposited film.…”

Section: Deposition Without Buffer Layermentioning

confidence: 99%

“…The sputtering conditions were similar to those used for obtaining piezoelectricity in our previous report. 24,25) Ta 2 O 5 thin films were deposited on STO(100), STO(110), and SiO 2 substrates at the same time. For comparison with the features of X-axisoriented Ta 2 O 5 thin films, a SiO 2 substrate was also used.…”

Section: Deposition Without Buffer Layermentioning

confidence: 99%

“…Next, a Ta 2 O 5 (Ta 2 O 5 150W ) thin film was deposited by applying the RF power of 150 W to the O 2 radical source to fabricate a thin film with a strong piezoelectricity. 25) The other conditions were the same as those described in Sect. 2.1.…”

Section: Deposition With Buffer Layermentioning

confidence: 99%

“…[17][18][19][20][21][22][23] After depositing X-axis-oriented Ta 2 O 5 thin films using a radio frequency (RF) magnetron sputtering system, Kakio, one of the authors, and colleagues evaluated the Rayleightype SAW (R-SAW) properties of a Ta 2 O 5 thin film on a synthetic fused silica (SiO 2 ) glass substrate. 24,25) Moreover, they evaluated the bulk acoustic wave (BAW) properties of a Ta 2 O 5 thin film on a silicon substrate. 26) However, a large propagation loss (PL) for the R-SAW or BAW was observed in the X-axis-oriented Ta 2 O 5 thin films.…”

Section: Introductionmentioning

confidence: 99%

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Evaluation of piezoelectric Ta₂O₅thin films deposited on SrTiO₃substrates

Yu¹,

Kakio²

2017

Jpn. J. Appl. Phys.

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Tantalum pentoxide (Ta2O5) piezoelectric thin films were deposited on (100) and (110) planes of strontium titanate (SrTiO3) substrates using an RF magnetron sputtering system. The crystallinity and Rayleigh-type surface acoustic wave propagation properties of the thin films were evaluated. The possibility that the Ta2O5 thin films were crystallized to orthorhombic Ta2O5 on SrTiO3 substrates by providing a buffer layer deposited without applying O2 radical power was demonstrated. From measured pole figures, it is considered that the crystalline Ta2O5/SrTiO3(100) sample has two lattice arrangements orthogonal to each other, and the crystalline Ta2O5/SrTiO3(110) sample has a single lattice arrangement. For a normalized film thickness h/λ of 0.45, the propagation loss for the deposition on SrTiO3(110) was 0.02 dB/λ, whereas that for the X-axis-oriented Ta2O5 thin film on SiO2 substrate was 0.21 dB/λ. Unfortunately, the coupling factor of the crystalline thin film was less than 0.3% for h/λ ranging from 0.29 to 0.45.

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Section: Deposition Without Buffer Layermentioning

confidence: 99%

Section: Deposition Without Buffer Layermentioning

confidence: 99%

Section: Deposition With Buffer Layermentioning

confidence: 99%