Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region

Jung, Byung Oh; Bae, Si‐Young; Kim, SangYun; Lee, Seunga; Lee, Jun Young; Lee, Dong-Seon; Kato, Yoshihiro; Honda, Yoshio; Amano, Hiroshi

doi:10.1016/j.nanoen.2014.11.003

Cited by 49 publications

(54 citation statements)

References 39 publications

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“…5a shows the edge between the non-polar (1-100) and semi-polar (1-101) planes which reveals slightly thicker QW width, other groups have explained this by possible different incorporation rates at the edge region due to gas flow i.e. flux shielding of the non-polar plane 52 . However unlike at the thicker QWs on the c-plane where there is a clear individually sharp luminescence peaks (RYG) seen in CL, these meeting points of the non-and semi-polar planes results in nearly no luminescence under CL investigation as seen in Fig.…”

Section: Resultsmentioning

confidence: 97%

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Conroy¹,

Kusch

et al. 2016

Nanoscale

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We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates

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Section: Resultsmentioning

confidence: 97%

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Conroy¹,

Kusch

et al. 2016

Nanoscale

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“…2(d)) would have similar mechanism with VLS, because the nanowires have a high aspect ratio of $100, which can not be realized by using normal SAG. [7][8][9][16][17][18]20,22,23 The underlying growth mechanism in this case would be neither pure VLS 1,2,12,13,24-27,29 nor pure SAG, 7-9,16-18,22,23 because of the factors: (1) for VLS, metal droplet can normally be observed at the tip of nanowires, but in our case there is no droplet at the tip of nanowires (Fig. 2(d)) or needles (Fig.…”

Section: Discussionmentioning

confidence: 99%

“…For MOCVD growth of GaN nanostructures, there has two main methods, i.e., vaporliquid(solid)-solid growth with metal catalyst (VLS) 1,2,12,13,[24][25][26][27]29 and catalyst-free anisotropic-growth on patterned substrate (i.e., selective area growth (SAG)). [7][8][9][16][17][18][19][20][21][22][23] However, for the nanowires with high aspect ratio (length/diameter > 35), it is difficult to be grown via SAG method [7][8][9][16][17][18]22,23,39 without the use of high silane ux 18,20 or complex pulsed-growth mode. 24 While, for the micro-rods of low aspect ratio (i.e., microscale-trunk rods), there is few report that they can be grown via VLS method.…”

Section: 11mentioning

confidence: 99%

“…2 achieved nanowire arrays via VLS at 780 C. Tian et al 36 prepared micro-pyramids via SAG at a high temperature about 1080 C. Bae et al 37 investigated the morphologies of micro-pyramids, and they found that micropyramids with smooth sidewalls can only be grown at the temperature higher than 900 C. Rozhavskaya et al 3 reported the growth of micro-rod arrays under 1040 C. Thus, growth temperature of these micro-structures prepared via SAG (950-1175 C) [7][8][9][16][17][18]22,23 is much higher than that of nanowires prepared via VLS (760-850 C). 1,2,12,13,[24][25][26][27]29 Thus, it is still a challenge to simultaneous growth of all these nanostructures (including nanowires and micro-rods) under a favorable condition.…”

Section: 11mentioning

confidence: 99%

“…Semiconductor nanostructures, such as nanowires, [1][2][3][12][13][14][15][24][25][26][27][28][29] needles, 4-6 pyramids, 7,8,16,38 rod/pillars, 8,9,[16][17][18][19][20][21][22][23] and trumpets, 10,11 have wide applications in novel electronic devices. In comparison with the nanowire structure, [1][2][3][12][13][14][15]27,29 vertically aligned needle, rod and pyramid structures, which have a nanoscale tip and robust microscale-trunk, can bring advantages in single nano-structure devices [4][5][6] and optical coupling.…”

Section: Introductionmentioning

confidence: 99%

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Controlled growth of aligned GaN nanostructures: from nanowires and needles to micro-rods on a single substrate

Zhao

Huang

et al. 2017

RSC Adv.

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Simultaneous growth of different kinds of aligned GaN nanostructures (i.e., nanowires, needles, pyramids and micro-rods) on a single substrate was firstly realized at a low temperature of 790 C by naturally changing the III/V ratio across the substrate via a coaxial pipeline configuration. The effects of substrate distance and growth pressure on nanostructure growth were investigated. The morphology variation from nanowires to micros-rods would be explained in terms of Ga species changing from the Ga element to GaN molecule in a hot-wall reactor. This work is helpful for on chip integration of different kinds of nanodevices on unusual substrates of low melting temperature.

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Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells

Cheng

Langelier

et al. 2020

Advanced Optical Materials

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Due to the increasing desire for nanoscale optoelectronic devices with green light emission capability and high efficiency, ternary III‐N‐based nanorods are extensively studied. Many efforts have been taken on the planar device configuration, which lead to unavoided defects and strains. With selective‐area molecular‐beam epitaxy, new “Russian Doll”‐type InGaN/AlGaN quantum wells (QWs) have been developed, which could largely alleviate this issue. This work combines multiple nanoscale characterization methods and k∙p theory calculations so that the crystalline structure, chemical compositions, strain effects, and light emission properties can be quantitatively correlated and understood. The 3D structure and atomic composition of these QWs are retrieved with transmission electron microscopy and atom probe tomography while their green light emission has been demonstrated with room‐temperature cathodoluminescence experiments. k∙p theory calculations, with the consideration of strain effects, are used to derive the light emission characteristics that are compared with the local measurements. Thus, the structural properties of the newly designed nanorods are quantitatively characterized and the relationship with their outstanding optical properties is described. This combined approach provides an innovative way for analyzing nano‐optical‐devices and new strategies for the structure design of light‐emitting diodes.

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Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region

Cited by 49 publications

References 39 publications

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Controlled growth of aligned GaN nanostructures: from nanowires and needles to micro-rods on a single substrate

Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells

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