Highly-ordered carbon nanotube arrays for electronics applications

Li, J.; Papadopoulos, Chris; Xu, Jimmy; Moskovits, Martin

doi:10.1063/1.124377

Cited by 620 publications

(340 citation statements)

References 21 publications

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“…For this analysis, wetting contact angles were assumed based on the observations of Rossi et al [219] and Kim et al [220], and continuum approximations for capillary dynamics [220], surface tension [221], and viscous drag [222] were shown to be justified. Properties were obtained as a function of nanowire diameters and number densities consistent with typical fabrication processes [223][224][225]. …”

Section: Assessment and Design Of Nanostructured Wicksmentioning

confidence: 94%

Recent Advances in Vapor Chamber Transport Characterization for High-Heat-Flux Applications

Weibel

Garimella

2013

Advances in Heat Transfer

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Owing to their high reliability, simplicity of manufacture, passive operation, and effective heat transport, flat heat pipes and vapor chambers are used extensively in the thermal management of electronic devices. The need for concurrent size, weight, and performance improvements in high-performance electronics systems, without resort to active liquid-cooling strategies, demands passive heat spreading technologies that can dissipate extremely high heat fluxes from small hot spots. In response to these daunting application-driven trends, a number of recent investigations have focused on the design, characterization, and fabrication of ultra-thin vapor chambers for proximate heat spreading away from these hot spots. The predominant transport mechanisms and operational limits have been found to be different under these conditions relative to conventional low-power heat pipes. Noteworthy advances in the fundamental understanding of evaporation and boiling from porous microstructures fed by capillary action, and improvements in vapor chamber characterization, modeling, design, and fabrication techniques are reviewed. Characterization of evaporation and boiling from idealized and realistic wick structures, observation of vapor formation regimes as a function of operating conditions, assessment of fluid dryout limitations, design of novel multi-scale and nanostructured wicks for enhanced transport, and incorporation of these high heat flux transport phenomena into device-level models are discussed. These recent developments have successfully extended the maximum operating heat flux limits of vapor chambers.2

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Section: Assessment and Design Of Nanostructured Wicksmentioning

confidence: 94%

Recent Advances in Vapor Chamber Transport Characterization for High-Heat-Flux Applications

Weibel

Garimella

2013

Advances in Heat Transfer

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“…Some well known examples are porous Si formation [1,2] and use of anodized alumina as nanostructure templates for formation of carbon nanotubes [3].…”

Section: Introductionmentioning

confidence: 99%

“…However, the electrochemical approaches, if it attains sufficiently high controllability at the nanometerscale, seems to be highly useful for nanostructure formation and processing. The expected advantages include: (1) process simplicity and versatility, (2) capability of self-organization, (3) low processing temperature, (4) low process induced damage, (5) precise electrical control and (6) low processing costs.Some well known examples are porous Si formation [1,2] and use of anodized alumina as nanostructure templates for formation of carbon nanotubes [3].The purpose of this paper is to review recent attempts by the authors' group at RCIQE, Hokkaido University, that have been carried out in order to investigate feasibility of utilizing electrochemical processes for nanometer-scale processing and nanostructure formation in III-V semiconductors. Topics discussed in this paper include controlled (1) anodic etching of InP,…”

mentioning

confidence: 99%

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Hasegawa

Sato

2005

Electrochimica Acta

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This paper reviews recent efforts by authors' group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo anodic and pulsed anodic etching of InP, formation of arrays of <001>-oriented straight nanopores in n-type (001) InP by anodization and their possible applications, and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in-situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics. Key words:III-V semiconductors, anodic etching, nanopore, electrodeposition, Schottky barrier 1.IntroductionIt is widely recognized that artificial semiconductor nanostructures such as quantum wires (QWRs) and quantum dots(QDs) give rise to new rich functionalities to materials. They produce new quantum state spectra with novel state transitions and linear and non-linear quantum transport phenomena, and open up opportunities for novel quantum devices which control quantum-mechanical behavior of electrons and photons in various sophisticated ways.The standard approach for semiconductor nanostructure formation is to use fine crystal growth techniques such as molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). To fabricate devices, various standard etching and metal deposition techniques are used together with standard lithography techniques. However, the electrochemical approaches, if it attains sufficiently high controllability at the nanometerscale, seems to be highly useful for nanostructure formation and processing. The expected advantages include: (1) process simplicity and versatility, (2) capability of self-organization, (3) low processing temperature, (4) low process induced damage, (5) precise electrical control and (6) low processing costs.Some well known examples are porous Si formation [1,2] and use of anodized alumina as nanostructure templates for formation of carbon nanotubes [3].The purpose of this paper is to review recent attempts by the authors' group at RCIQE, Hokkaido University, that have been carried out in order to investigate feasibility of utilizing electrochemical processes for nanometer-scale processing and nanostructure formation in III-V semiconductors. Topics discussed in this paper include controlled (1) anodic etching of InP,

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“…The latter assumed the honeycomb geometry of the substrate. The preparation of the AAO substrates can be found elsewhere in the literature [23,24,25,26]. Those used in these experiments had a hole lattice constant, a, of 100 nm and a hole radius, R hole = 33 nm.…”

mentioning

confidence: 99%

Magnetic-flux periodic response of nanoperforated ultrathin superconducting films

et al. 2006

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We have patterned a hexagonal array of nano-scale holes into a series of ultrathin, superconducting Bi/Sb films with transition temperatures 2.65 K < Tco <5 K. These regular perforations give the films a phase-sensitive periodic response to an applied magnetic field. By measuring this response in their resistive transitions, R(T ), we are able to distinguish regimes in which fluctuations of the amplitude, both the amplitude and phase, and the phase of the superconducting order parameter dominate the transport. The portion of R(T ) dominated by amplitude fluctuations is larger in lower Tco films and thus, grows with proximity to the superconductor to insulator transition.The superconductors originally considered by BCS exhibited spectacularly sharp transitions from a finite resistance to zero resistance as a function of temperature [1]. Fluctuation effects were negligible. Presently, a great deal of attention focuses on low superfluid density superconductors for which fluctuations strongly influence and substantially broaden their phase transitions. These include the high temperature superconductors [2], and in particular, their underdoped versions [3,4,5], and ultrathin superconducting films near the superconductor to insulator transition (SIT) [6,7,8,9,10]. For the latter, resistive transitions, R(T ), can develop widths comparable to or greater than the apparent mean field transition temperature, T c0 [11].To discuss the effects of fluctuations on the R(T ) it is helpful to consider the two component superconductor order parameter ψ = |ψ 0 |e iφ . In bulk elemental superconductors, the sharp R(T ) reflect the near simultaneous appearance of a finite amplitude, |ψ 0 |, and long range coherence of the phase, φ. In low superfluid density superconductors, however, the amplitude first forms at high temperatures and phase coherence develops at lower temperatures [2,12,13,14]. High on a transition quasiparticles transiently form Cooper pairs, which enhances the quasiparticle or fermionic contribution to the conductivity, σ f . These pair or amplitude fluctuations give rise to the initial drop in R(T ) [15]. At very low values of R, a substantial Cooper pair density exists and the conductivity of these bosons, σ b , controls R(T ). σ b is limited by the motion of vortices which causes fluctuations in the phase of the cooper pair condensate. In between, a two fluid model may best describe the transport [7].Physical interpretations of the R(T ) in high sheet resistance films especially those near the SIT relies heavily on distinguishing the amplitude and phase fluctuation dominated regimes [3,4,5,6]. Most often, explicit models for σ f (T ) and σ b (T ) do not exist as a guide and qualitative arguments must prevail. In this paper we present the magnetic flux response of the R(T ) of very low superfluid density (high sheet resistance) [11,16] films patterned with a nanoscale array of holes. We use the quality of the flux response at different points along their transitions to determine the presence of well-defined vortic...

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Highly-ordered carbon nanotube arrays for electronics applications

Cited by 620 publications

References 21 publications

Recent Advances in Vapor Chamber Transport Characterization for High-Heat-Flux Applications

Recent Advances in Vapor Chamber Transport Characterization for High-Heat-Flux Applications

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Magnetic-flux periodic response of nanoperforated ultrathin superconducting films

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