Highly 
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-doped graphene generated through intercalated terbium atoms

Daukiya, Lakshya; Nair, Maya Narayanan; Hajjar‐Garreau, Samar; Vonau, F.; Aubel, Dominique; Bubendorff, Jean-Luc; Cranney, Marion; Denys, Emmanuel; Florentin, A.; Reiter, Günter; Simon, Laurent

doi:10.1103/physrevb.97.035309

Cited by 27 publications

(7 citation statements)

References 15 publications

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“…This observation agrees qualitatively with experimental data in the literature obtained after the annealing of intercalated samples, although at temperatures significantly above RT (Rb, [49] Na, [22] Eu, [54] Al, [50] Yb [20,55] ). Earlier studies attribute this observation to a laterally inhomogeneous sample consisting of intercalated and pristine graphene areas.…”

Section: Characterization Of the Intercalation Processsupporting

confidence: 92%

π Band Folding and Interlayer Band Filling of Graphene upon Interface Potassium Intercalation

Huempfner

Otto

Fritz

et al. 2022

Adv Materials Inter

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The structural and electronic properties of epitaxial monolayer graphene on SiC(0001) are examined upon potassium intercalation. Notably, the first real‐space observation via scanning tunneling microscopy of the (2 × 2) superstructure in graphene‐based thin films formed by the potassium atoms below the uppermost graphene layer is presented. Therein, additional signatures stemming from quasiparticle interference effects are found allowing investigations of the electronic bands of K‐intercalated epitaxial monolayer graphene on a local scale. Those data are compared to area‐averaged results obtained from photoelectron spectroscopy. In particular, backfolding of the graphene π bands are found as a consequence of the (2 × 2) superstructure of the K atoms with respect to the graphene lattice. This is accompanied by a strong n‐type doping effect that causes a rigid shift of the Dirac bands to higher binding energies and filling of two parabolic interlayer bands at the Γ point of the surface Brillouin zone of the graphene lattice as well. This electronic configuration is promoted by additional penetration of potassium atoms into the interspace between the SiC substrate and the buffer layer that is located between the substrate and the quasi‐freestanding graphene sheet. Consequently, the epitaxial monolayer graphene sample transforms to n‐doped epitaxial bilayer graphene upon K intercalation.

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Section: Characterization Of the Intercalation Processsupporting

confidence: 92%

π Band Folding and Interlayer Band Filling of Graphene upon Interface Potassium Intercalation

Huempfner

Otto

Fritz

et al. 2022

Adv Materials Inter

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“…This shift can be attributed to the variation in the work function induced by the insertion of Gd at the graphene/SiC interface. Similar observations were also reported in other element-intercalated graphene studies. , These outcomes indicate that the carbon buffer layer decouples from the SiC substrate and transforms into freestanding graphene upon Gd intercalation.…”

supporting

confidence: 88%

“…Similar observations were also reported in other element-intercalated graphene studies. 36,37 These outcomes indicate that the carbon buffer layer decouples from the SiC substrate and transforms into freestanding graphene upon Gd intercalation. Figure 1e exhibits the ARPES measurements on the buffer layer, demonstrating two nondispersing states g 1 and g 2 at −0.52 eV and −1.63 eV.…”

mentioning

confidence: 99%

Observation of a Folded Dirac Cone in Heavily Doped Graphene

Wang

et al. 2023

J. Phys. Chem. Lett.

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Superlattice potentials imposed on graphene can alter its Dirac states, enabling the realization of various quantum phases. We report the experimental observation of a replica Dirac cone at the Brillouin zone center induced by a superlattice in heavily doped graphene with Gd intercalation using angle-resolved photoemission spectroscopy (ARPES). The replica Dirac cone arises from the (√3× √3)R30°superlattice formed by the intervalley coupling of two nonequivalent valleys (e.g., the Kekule-like distortion phase), accompanied by a bandgap opening. According to the findings, the replica Dirac band in Gd-intercalated graphene disappears beyond a critical temperature of 30 K and can be suppressed by potassium adsorption. The modulation of the replica Dirac band is primarily attributable to the residual frozen gas, which can act as a source of intervalley scattering at temperatures below 30 K. Our results highlight the persistence of the hidden Kekule-like phase within the heavily doped graphene, enriching our current understanding of its replica Dirac Fermions.

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“…Because of the intercalation of Mg atom, the monolayer graphene can transfer into decoupled bilayer graphene, exhibiting special electronic band structure in the intercalated region [87]. The intercalation of Ta atoms not only forms n-type doped graphene, but also enables the graphene decoupled from SiC substrate [88].…”

Section: Mechanism and Features Of Metal Intercalationmentioning

confidence: 99%

The growth of epitaxial graphene on SiC and its metal intercalation: a review

Yang,

Ma,

Bian

et al. 2024

J. Phys.: Condens. Matter

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High-quality epitaxial graphene (EG) on SiC is crucial to high-performance electronic devices due to the good compatibility with Si-based semiconductor technology. Metal intercalation has been considered as a basic technology to modify EG on SiC. In the past ten years, there have been extensive research activities on the structural evolution during EG fabrication, characterization of the atomic structure and electronic states of EG, optimization of the fabrication process, as well as modification of EG by metal intercalation. In this perspective, the developments and breakthroughs in recent years are summarized and future expectations are discussed. A good understanding of the growth mechanism of EG and subsequent metal intercalation effects is fundamentally important.

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Highly n -doped graphene generated through intercalated terbium atoms

Cited by 27 publications

References 15 publications

π Band Folding and Interlayer Band Filling of Graphene upon Interface Potassium Intercalation

π Band Folding and Interlayer Band Filling of Graphene upon Interface Potassium Intercalation

Observation of a Folded Dirac Cone in Heavily Doped Graphene

The growth of epitaxial graphene on SiC and its metal intercalation: a review

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