Highly enhanced visible light photodetection properties of a ZnO phototransistor via an additional solution processed thin Al₂O₃ layer

Abstract

Zinc oxide (ZnO) is one of the most widely used oxide semiconductor as an active layer of ultra-violet (UV) phototransistors due to its wide band gap of 3.3 eV. Recently,...

Thermostable ZnO/Ag@SiO2 nanohybrid material for extraordinary antibacterial activity polyester fibers

“…At the same time, the ZnO/Ag and ZnO/Ag@SiO 2 samples exhibited higher absorption in the visible area (400–800 nm). As shown in Figure 1B, ZnO NPs are oxides with a wide band gap (Eg = 3.37 eV) 56 . Only UV light with a shorter wavelength can excite the electrons in their valence band to leap to the conduction band.…”

“…As shown in Figure 1B, ZnO NPs are oxides with a wide band gap (Eg = 3.37 eV). 56 Only UV light with a shorter wavelength can excite the electrons in their valence band to leap to the conduction band. In contrast, the doping of silver results in the creation of an impurity energy level close to the peak of the ZnO NPs valence band.…”

Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure

“…Therefore, in recent investigations, the emphasis has been on utilizing the defect states of oxide semiconductors, such as oxygen vacancies, to widen the detection range from UV to visible range [23][24][25][26]. Numerous methods such as doping, mechanochemical treatments, and forming a heterostructure with metal oxides have been studied to enhance visible-light photoresponse capability [26][27][28]. Methods such as doping or mechanochemical treatments can generate a large amount of oxygen vacancies, resulting in improved characteristics for detecting visible light.…”

A study of the optical properties of wide bandgap oxides for a transparent photovoltaics platform

“…5,13 Several wide-band metal oxides with a bandgap of more than 3.0 eV, such as TiO 2 , Ga 2 O 3 , ZnO, and NiO, are selected for efficient TPV devices due to their outstanding absorption coefficient, chemical stability, and low environmental impact associated with their production. 12,[14][15][16][17][18] Moreover, metal oxide-based TPV devices are promising for PVintegrated photoelectrochemical systems. 19 Several heterojunctions (such as NiO/ZnO, TiO 2 /Co 3 O 4 , and TiO 2 /NiO) were designed by numerous methods to improve the performance of TPV devices.…”