Highly enhanced hydrogen sensing properties of sericin-induced exfoliated MoS2 nanosheets at room temperature

Kathiravan, Deepa; Huang, Bohr–Ran; Saravanan, Adhimoorthy; Prasannan, Adhimoorthy; Hong, Po‐Da

doi:10.1016/j.snb.2018.09.104

Cited by 53 publications

(24 citation statements)

References 37 publications

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“…The high-intensity peaks of Mo 3d3/2 at 228 eV and Mo 3d5/2 at 232 eV are consistent with previous research [43][44][45][46]. Figure 3c shows the highintensity peaks of the S 2s spectrum at 164 and 163 eV, which correspond to the orbital peaks of S 2p1/2 and S 2p3/2, respectively, and are consistent with the reported peak positions of MoS2 crystals [46][47][48]. Figure 3d shows the seam fitting of O in the MoS2 films.…”

Section: Resultssupporting

confidence: 91%

Effect of Deposition Pressure on the Microstructure and Optical Band Gap of Molybdenum Disulfide Films Prepared by Magnetron Sputtering

et al. 2019

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MoS2 films were prepared via magnetron sputtering under different deposition pressures, and the effects of deposition pressure on the crystal structure, surface morphology, and optical properties of the resulting films were investigated. The results show that the crystallinity of the films first increases and then decreases with increasing pressure. The surface of the films prepared by magnetron sputtering is dense and uniform with few defects. The deposition pressure affects the grain size, surface morphology, and optical band gap of the films. The films deposited at a deposition pressure of 1 Pa revealed remarkable crystallinity, a 30.35 nm grain size, and a 1.67 eV optical band gap. Given the large electronegativity difference between MoS2 molecules and weak van der Waals forces between layers, the MoS2 films are prone to defects at different deposition pressures, causing the exciton energy near defects to decrease and the modulation of the surrounding band.

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Section: Resultssupporting

confidence: 91%

Effect of Deposition Pressure on the Microstructure and Optical Band Gap of Molybdenum Disulfide Films Prepared by Magnetron Sputtering

et al. 2019

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“…Compared with that of other methods, the linear range of the method outlined in work is relatively wide and the detection limit is relatively good. In Kathiravan's research [27], a multilayer sensor (MIP/MIL-101(Cr)/MoS2/GCE) was successfully prepared for the detection of Qu, whereas the sensor in this work only modified one layer, but they have the same linear range (0.1-700 μmol•L −1 ), indicating that the use of the Heme/GCE sensor represents a more convenient alternative. Table S1 shows a comparison of the Qu detection results of different methods.…”

Section: Qu Analysismentioning

confidence: 94%

Convenient Heme Nanorod Modified Electrode for Quercetin Sensing by Two Common Electrochemical Methods

et al. 2021

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Quercetin (Qu) is one of the most abundant flavonoids in the human diet. High concentrations of Qu can easily cause adverse effects and induce inflammation, joint pain and stiffness. In this study, Heme was used as a sensitive element and deposited and formed nanorods on a glassy carbon electrode (GCE) for the detection of Qu. The Heme/GCE sensor was characterized using scanning electron microscopy (SEM), cyclic voltammetry (CV), differential pulse voltammetry (DPV) and electrochemical impedance spectroscopy (EIS) techniques. Under optimized conditions, the developed sensor presented a linear concentration ranging from 0.1 to 700 μmol·L−1 according to the CV and DPV methods. The detection limit for the sensor was 0.134 μmol·L−1 and its sensitivity was 0.12 μA·μM−1·cm−2, which were obtained from CV analysis. Through DPV analysis we obtained a detection limit of 0.063 μmol·L−1 and a sensitivity of 0.09 μA·μM−1·cm−2. Finally, this sensor was used to detect the Qu concentration in loquat leaf powder extract, with recovery between 98.55–102.89% and total R.S.D. lower than 3.70%. The constructed electrochemical sensor showed good anti-interference, repeatability and stability, indicating that it is also usable for the rapid detection of Qu in actual samples.

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“…The mechanism is based on the work function modulation of Pd nanoparticle in presence of H 2 gas. Kathiravan et al synthesized highly stabilized MoS 2 nanosheets using biowaste sericin‐assisted liquid phase exfoliation for enhanced H 2 gas sensing at room temperature 267. A response of 6.7%–47.6% was obtained for H 2 concentration of 10–500 ppm with the sericin adsorbed MoS 2 nanoflakes.…”

Section: Efforts To Improve Performance Of Devices Based On These Matmentioning

confidence: 99%

Recent Progress in Chemiresistive Gas Sensing Technology Based on Molybdenum and Tungsten Chalcogenide Nanostructures

Jha

Bhat

2020

Adv Materials Inter

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bonding of transition metal and chalcogen atom and their crystal structure. Interestingly, all these compounds exist as layered material except tungsten oxide (WO 3 ) whose hydrated crystal (WO 3 .H 2 O) is layered in nature. [2,3] Each of these chalcogenides possesses unique features. Several micro and nanostructures of these chalcogenides have been synthesized in literature for various applications including gas sensors, biosensors, batteries, supercapacitor, photoelectrochemical and electrochromic devices. However, this review article will focus on gas sensing applications of these materials.Gas sensors play a crucial role in our life as they find applications ranging from monitoring indoor air quality to detecting highly toxic gases. Two important components of a gas sensing device are receptor and transducer. The receptor enables the chemical interaction with the target analyte molecule, which is further converted into analytical signal by the transducer. There are several transduction techniques available in gas sensing based on the physical or chemical change being measured. Broadly, they can be classified into six different classes based on sensing principles which is listed in Table 1.Chemiresistive devices have several advantages over other existing techniques. For example, the structure of these types of devices is very simple and it can be integrated with the current complementary metal oxide semiconductor (CMOS) technology. Even though, several advances have been made over last few years to improve sensing performance, the search for reliable and repeatable gas sensing element is an ongoing endeavor with lots of expectation from tungsten and molybdenum chalcogenides.After the rise of graphene, other layered materials have emerged as important functional materials for various applications of highest scientific values. Among these, layered transition metal dichalcogenides (TMDs) have a special presence as they cover whole class of materials, i.e., ranging from pure insulators to true metals. W and Mo chalcogenides are mostly semiconducting in ambient conditions and therefore, suitable for electronic application such as chemiresistive gas sensors. Though, layered TMDs (MX 2 M = Mo, and W and X = S, Se, and Te) have evolved expeditiously in a very short time, we simply cannot ignore metal oxide (particularly Mo-and W-based Chalcogens are oxygen family elements with oxygen having distinct properties than the other group members like sulfur, selenium, and tellurium. Tungsten and molybdenum chalcogenides that include mainly metal oxides (MO 3 ; M = Mo, and W) and metal dichalcogenides (MX 2 ; X = S, Se, and Te) are the most exciting class of inorganic materials. They have been widely investigated in various applications including lithium and sodium ion storage, supercapacitors, gas sensors, biosensors etc. due to their fascinating surface properties and ease of fabrication. Different class of nanostructures including 0D (nanoparticles, quantum dots), 1D (nanowires, nanotubes, nanoribbons, nanobelts etc.), a...

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Highly enhanced hydrogen sensing properties of sericin-induced exfoliated MoS2 nanosheets at room temperature

Cited by 53 publications

References 37 publications

Effect of Deposition Pressure on the Microstructure and Optical Band Gap of Molybdenum Disulfide Films Prepared by Magnetron Sputtering

Effect of Deposition Pressure on the Microstructure and Optical Band Gap of Molybdenum Disulfide Films Prepared by Magnetron Sputtering

Convenient Heme Nanorod Modified Electrode for Quercetin Sensing by Two Common Electrochemical Methods

Recent Progress in Chemiresistive Gas Sensing Technology Based on Molybdenum and Tungsten Chalcogenide Nanostructures

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