Microwave
dielectric materials are of great interest due to their
applications in communication technology. The intrinsically low dielectric
permittivity (generally less than 100) of traditional microwave dielectric
materials has limited their capability in reducing the device size
and developing various applications. In this paper, we report a microwave
dielectric material, (La + Nb) co-doped BaSnO3, which exhibits
both frequency- and temperature-independent colossal permittivity
(ε > 103) over the frequency range from 10 Hz
to
microwave region (∼1 GHz) while retaining the ultra-low dielectric
loss of 4 × 10–4, equivalent to a quality factor Q
f (GHz) ∼2500. Systemic defect analysis
and density functional theory calculations suggest that negatively
charged La and positively charged Nb octahedra are correlated adjacent
to each other along the [110] direction, forming defect-dipole clusters,
which lead to their microwave dielectric properties. This work presents
insights on the development of microwave dielectric materials that
offer many potentials for microwave dielectric devices and their associated
applications in future communication technology.