Highly Efficient Gating and Doping of Carbon Nanotubes with Polymer Electrolytes

Siddons, Giles P.; Merchin, David; Back, Ju Hee; Jeong, Jae Kyeong; Shim, Moonsub

doi:10.1021/nl049612y

Cited by 148 publications

(157 citation statements)

References 30 publications

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“…2d). The actual carrier density can be estimated using the quantum capacitance of the graphene channel and the geometrical gate capacitance 24,31 , resulting in a carrier density difference of B3 Â 10 12 cm À 2 , further supporting the observations based on the Raman frequencies (Fig. 1c).…”

Section: Resultssupporting

confidence: 80%

“…The doping level in the different domains can be further quantified and the carrier type unambiguously extracted if a gate potential is applied. For this purpose, top-gated graphene transistors on single-domain and periodically poled LiNbO 3 were fabricated employing an electrolyte top gate (LiClO 4 in a poly(ethylene oxide) medium) 31 (Fig. 2a,b).…”

Section: Resultsmentioning

confidence: 99%

“…Transistor devices were fabricated via electron beam evaporation of Ti/Pd source and drain electrodes with polymer electrolyte top gates prepared through the dissolution of LiClO 4 .3H 2 O and poly(ethylene oxide) (Sigma Aldrich, weight average molecular weight ¼ 100,000) in acetonitrile with 2.4:1:10 polymer to salt to solvent weight ratios similar to ref. 31. The electrolyte solution was spin-coated onto the graphene devices at 3,000 r.p.m.…”

Section: Methodsmentioning

confidence: 99%

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Ferroelectrically driven spatial carrier density modulation in graphene

et al. 2015

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The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180°-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Ferroelectrically driven spatial carrier density modulation in graphene

et al. 2015

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“…The ambipolar behavior of the CNT networks indicates that the injection of both electrons and holes is facile from the high work function Au source and drain contacts, which may result from enhancement of the electric fields at the electrode/CNT interfaces due to the presence of electrolyte. 45,52,53 . Film coverage refers to the tube density as assessed by AFM.…”

Section: ϫ10mentioning

confidence: 99%

Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

et al. 2010

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Expanding applications for microelectronics in large-area sensor arrays, disposable sensor tapes, timeϪtemperature smart labels, radio frequency identification tags, and roll-up displays 1Ϫ4 motivate efforts to integrate electronics onto flexible plastic, paper, or metal substrates. A principal strategy for achieving flexible electronics is to employ graphic arts methods such as flexographic or ink-jet printing to pattern metallic, semiconducting, and insulating inks onto foils and paper. 5Ϫ10 Liquid phase printing offers the potential for high-throughput roll-toroll or sheet-to-sheet processing of electronics on large-area substrates, facilitating applications where large areas are necessary (e.g., displays) and also potentially translating into low production cost. Yet the challenge for printed electronics is to achieve high-performance circuits. The inherently low carrier mobilities of many printable organic or nanoparticle-based semiconductors lead to reduced transistor switching frequencies and high circuit supply voltages. Alternative strategies in which silicon chips are bonded to flexible substrates (by transfer printing or pick-andplace methods) are also attractive because they benefit from the superior electronic properties of silicon and the very advanced state of silicon microelectronics technology.11 In a competitive environment, the success of liquid phase printed electronics depends on substantial performance improvements, in particular, the development of faster, lower power printed circuits. Figure 1a displays a summary of reported signal delay times versus supply voltages for ring oscillator circuits based on organic semiconductors and carbon nanotube (CNT) arrays. It is evident that for nonprinted organic ring oscillators (open blue symbols) signal delays of 1Ϫ10 s have been achieved but only for supply voltages of 10Ϫ100 V, 12Ϫ24 while for supply voltages in the range of 4Ϫ10 V, the delay is above 10 s for the fastest circuits, with most displaying Ͼ1 ms switching times.25Ϫ28 Reports of printed ring oscillators are less common (solid green symbols in Figure 1a), and these circuits have generally required tens of volts to achieve switching times on the order of 1 ms.29Ϫ32 Such large voltages are not practical for many potential applications of flexible electronics where power will be supplied by thin-film batteries or radio frequency fields. Very recently, unipolar, p-type electrolyte-gated ring oscillator circuits have been demonstrated that indeed operate at very low

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“…Due to the large gate capacitance, the PEO/LiClO 4 electrolyte gate shows much stronger coupling than conventional back-gate, similar to electrolyte gated carbon nanotube and graphene FETs. [30][31][32] This is illustrated by the nearly 40 times stronger gate tuning of G by PEO/LiClO 4 electrolyte gate compared to that of backgate (Fig. 2b).…”

mentioning

confidence: 99%

Strong Tuning of Rashba Spin–Orbit Interaction in Single InAs Nanowires

2012

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A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin orbit interaction in InAs nanowires where a strong electric field is created either by a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables six-fold tuning of Rashba coefficient and nearly three orders of magnitude tuning of spin relaxation time within only 1 V of gate bias. Such a dramatic tuning of spin orbit interaction in nanowires may have implications in nanowire based spintronic devices.Nanowires of small band gap III-V semiconductors such as indium arsenide (InAs) have recently attracted significant interest in nanoelectronic device research.1-10 With high electron mobility, nanostructures of InAs have appealing potential for high speed electronics such as field effect transistor (FET). [3][4][5][6][7][8] In addition to high electron mobility that is important for charge transport based electronic devices, InAs also has strong spin-orbit interaction (SOI) and was proposed to be an essential material for spintronic devices such as spin FET in which controlling the electrons' spin degree of freedom renders the device's functionality. 11-13 Therefore, InAs nanowire appears to be also an interesting quasi-one dimensional (1D) platform to explore spintronic devices such as 1D spin-FET which exploits the SOI effect to control electrons' spin. SOI is a relativistic effect experienced by electrons (or any charge particles) moving in an electric field E. In the rest frame of the electron, E is Lorentz transformed into an effective magnetic field which couples to the electron's spin and consequently induces spin precession and relaxation. The electric field in this SOI effect could be from the asymmetry in the intrinsic crystal structure, the asymmetric confinement potential in heterostructure interface, or simply an externally applied

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Highly Efficient Gating and Doping of Carbon Nanotubes with Polymer Electrolytes

Cited by 148 publications

References 30 publications

Ferroelectrically driven spatial carrier density modulation in graphene

Ferroelectrically driven spatial carrier density modulation in graphene

Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

Strong Tuning of Rashba Spin–Orbit Interaction in Single InAs Nanowires

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