Abstract:A systematic experimental study is conducted on floating field rings (FFR) incorporated into 4H-SiC junction barrier Schottky (JBS) diodes across four voltage ratings 650, 1200, 1700 and 3300V, in pursuit of highly efficient FFR designs. 30 designs of FFR in 3 categories are studied for each voltage rating, and the measured breakdown voltage (Vbr) of JBS divided by ring system width (W) is taken as the figure of merit (FOM) of each design. The influence of ring spacing, ring width and number of rings on Vbr is… Show more
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