2022
DOI: 10.1016/j.jechem.2021.09.021
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Highly efficient flexible perovskite solar cells with vacuum-assisted low-temperature annealed SnO2 electron transport layer

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Cited by 38 publications
(34 citation statements)
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“…With the HADI treatment, the device yields the superior PCE of 22.44%, with V oc of 1.17 V, J sc of 24.64 mA cm −2 , and FF of 78.16%, which are the highest PCE and V oc for flexible PSCs to date (Figure 5c). [7,9,[49][50][51][52][53][54] As shown in Figure S11, Supporting Information, the EQE curves reveal that the HADI-treated device possesses slightly higher EQE response from 450 to 800 nm, corresponding to the higher integrated J sc (24.68 mA cm −2 ) compared with the control device (24.37 mA cm −2 ), which is well-matched with the J sc obtained from the J-V curve. The statistics of photovoltaic parameters (PCE, J sc , V oc , and FF) of the f-PSCs are summarized in Figure 5d and Figure S12, Supporting Information, and all are increased with the HADI treatment.…”
Section: Resultsmentioning
confidence: 99%
“…With the HADI treatment, the device yields the superior PCE of 22.44%, with V oc of 1.17 V, J sc of 24.64 mA cm −2 , and FF of 78.16%, which are the highest PCE and V oc for flexible PSCs to date (Figure 5c). [7,9,[49][50][51][52][53][54] As shown in Figure S11, Supporting Information, the EQE curves reveal that the HADI-treated device possesses slightly higher EQE response from 450 to 800 nm, corresponding to the higher integrated J sc (24.68 mA cm −2 ) compared with the control device (24.37 mA cm −2 ), which is well-matched with the J sc obtained from the J-V curve. The statistics of photovoltaic parameters (PCE, J sc , V oc , and FF) of the f-PSCs are summarized in Figure 5d and Figure S12, Supporting Information, and all are increased with the HADI treatment.…”
Section: Resultsmentioning
confidence: 99%
“…Vacuum science has wide applications in many fields [1][2][3][4][5][6][7], such as semiconductor industry [8,9], aerospace [10,11] and military [12,13]. In semiconductor industry, the growth of pure silicon requires a vacuum environment to reduce molecular contamination, besides, micromachining steps including reactive ion etching (RIE), chemical vapor deposition (CVD) and physical vapor deposition (PVD) also need to be completed under vacuum with a clean environment and reduced molecular interference.…”
Section: Introductionmentioning
confidence: 99%
“…Yiqiang Zhan et al . 30 prepared the SnO 2 ETL using a vacuum-assisted annealing method. The annealing temperature of the ETL was only 100 °C and the champion devices could achieve a PCE of 20.14%.…”
Section: Introductionmentioning
confidence: 99%
“…Yue Jiang et al 29 prepared SnO 2 quantum dots using a super-rapid and additive-free microwave-assisted reaction process, and the PCE of the assembled devices was as high as 20.24%. Yiqiang Zhan et al 30 prepared the SnO 2 ETL using a vacuum-assisted annealing method. The annealing temperature of the ETL was only 100 1C and the champion devices could achieve a PCE of 20.14%.…”
Section: Introductionmentioning
confidence: 99%