2019
DOI: 10.1016/j.orgel.2019.105442
|View full text |Cite
|
Sign up to set email alerts
|

Highly efficient flexible organic light-emitting diodes based on a high-temperature durable mica substrate

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
13
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 15 publications
(15 citation statements)
references
References 44 publications
1
13
0
Order By: Relevance
“…The situation of mutual offset intensifies with the degree of heterojunction, leading to lower current densities. This phenomenon was opposite to the charge generation layer (CGL) structure observed in the tandem devices [23][24][25]. The HAT-CN/TAPC heterojunction is recognized as one of the most effective CGL structures.…”
Section: Structures Of the Hilmentioning
confidence: 77%
“…The situation of mutual offset intensifies with the degree of heterojunction, leading to lower current densities. This phenomenon was opposite to the charge generation layer (CGL) structure observed in the tandem devices [23][24][25]. The HAT-CN/TAPC heterojunction is recognized as one of the most effective CGL structures.…”
Section: Structures Of the Hilmentioning
confidence: 77%
“…Considering the consistency of the electron-transport materials used in the tandem device ( i.e. , device CT), the electron-transporting B3PyMPM co-doped with lithium carbonate (Li 2 CO 3 ) was adopted as an n-type layer, while HAT-CN with its strong oxidizing property was used to further strengthen the electron injection. , Furthermore, the charge generation interface was expected to form between the HAT-CN layer and the adjacent hole-transporting TAPC layer . Consequently, the optimal tandem device was fabricated with the following generalized design: ITO (120 nm)/TAPC (25 nm)/TCTA (5 nm)/ imM- m -Cz doped with 8 wt % Ir­(ppy) 3 (20 nm)/B3PyMPM (40 nm)/B3PyMPM doped with 20 wt % Li 2 CO 3 (10 nm)/HAT-CN (10 nm)/TAPC (75 nm)/TCTA (5 nm)/ imM- m -Cz doped with 8 wt % Ir­(ppy) 3 (20 nm)/B3PyMPM (50 nm)/LiF (0.8 nm)/Al (150 nm).…”
Section: Resultsmentioning
confidence: 99%
“…Advances in internet of things (IoT) applications based on semiconductor sensors have opened the door to wearable devices, smart buildings, and optimization of manufacturing processes. Many applications involving semiconductor devices require robustness under high-temperature conditions as well as long-term resilience and flexibility. Plastics can be used to create flexible substrates with a high degree of transparency, durability, and robustness; however, they are ill-suited to high-temperature environments and preclude the use of annealing to produce high-quality oxide semiconductors. , Therefore, the choice of flexible substrate materials plays an important role. Mica is highly transparent, flexible, impermeable to moisture, and resistant to high temperatures, making it an excellent candidate substrate for a variety of devices.…”
Section: Introductionmentioning
confidence: 99%
“…Mica is highly transparent, flexible, impermeable to moisture, and resistant to high temperatures, making it an excellent candidate substrate for a variety of devices. Note that mica is also relatively lightweight, inexpensive, and easy to process, with excellent electrical resistance and robustness under acidic and alkaline conditions. , The layered structure of mica can be easily separated due to van der Waals forces, which makes it highly flexible and strong and reduces the requirements for mechanical equipment. , …”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation