2017 11th IEEE International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG) 2017
DOI: 10.1109/cpe.2017.7915174
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Highly efficient drive system based on SiC MOSFETs for high power electric transportation

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Cited by 4 publications
(3 citation statements)
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“…The model reaches convergence after 200 iterations, as shown in Figure 17, knowing that the ambient temperature is 70 • C and the power dissipation per module is 250 W. This power dissipation corresponds to the highest value achieved by equations developed in [24] with energy losses of Table 1. Simulation results show that the maximum temperature achieved is 122 • C. The temperature distribution around the simulated system is given in Figure 18a…”
Section: Steady-state Mode Simulation Resultsmentioning
confidence: 86%
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“…The model reaches convergence after 200 iterations, as shown in Figure 17, knowing that the ambient temperature is 70 • C and the power dissipation per module is 250 W. This power dissipation corresponds to the highest value achieved by equations developed in [24] with energy losses of Table 1. Simulation results show that the maximum temperature achieved is 122 • C. The temperature distribution around the simulated system is given in Figure 18a…”
Section: Steady-state Mode Simulation Resultsmentioning
confidence: 86%
“…The double-pulse test shown in Figure 13 is used to measure the switching energy losses of the SiC power module [23,24]. The power module is tested for temperatures varying from 25 to 150 • C at a 540 V DC -100 A.…”
Section: Double-pulse Testmentioning
confidence: 99%
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