Highly efficient diamond Raman laser

Mildren, Richard P.; Sabella, Alexander

doi:10.1364/ol.34.002811

Cited by 97 publications

(52 citation statements)

References 9 publications

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“…Anti-reflection (AR) coatings (R<0.1% at = 1064nm and = 1240nm) were then applied to the front and back surfaces. The absorption coefficient was then measured to be <0.006cm 1 using a simplified calorimetry technique similar to that in [3], rather than the ISO approved methodology. The diamond sample was mounted in a thermo-electrically cooled brass mount.…”

Section: Low-loss Synthetic Diamondmentioning

confidence: 99%

“…Recently, the use of high optical quality, single-crystal, synthetic diamond as a Raman material in external cavity [3][4][5][6] and intracavity [7][8][9] configurations has been demonstrated -made possible by the progress in diamond chemical vapour deposition (CVD) [10,11]. Diamond has a large Raman gain (64cm/GW at = 532nm [12] and between 12.5cm/GW [13] and 16.6cm/GW [5] at = 1064nm), broad transparency (0.23-2.5µm and >7µm [14]) and a large Raman shift (1332cm 1 [15]).…”

Section: Introductionmentioning

confidence: 99%

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16 W continuous-wave Raman laser using low-loss synthetic diamond

Lubeigt¹,

Savitski²,

Bonner³

et al. 2011

Opt. Express

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Low-birefringence ( n<2x10 6 ), low-loss (absorption coefficient <0.006cm1 at 1064nm), single-crystal, synthetic diamond has been exploited in a CW Raman laser. The diamond Raman laser was intracavity pumped within a Nd:YVO 4 laser. At the Raman laser wavelength of 1240nm, CW output powers of 1.6W and a slope efficiency with respect to the absorbed diode-laser pump power (at 808nm) of ~18% were measured. In quasi-CW operation, maximum on-time output powers of 2.8W (slope efficiency ~24%) were observed, resulting in an absorbed diode-laser pump power to the Raman laser output power conversion efficiency of 13%. References and links ©2011 Optical Society of America

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Section: Low-loss Synthetic Diamondmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

16 W continuous-wave Raman laser using low-loss synthetic diamond

Lubeigt¹,

Savitski²,

Bonner³

et al. 2011

Opt. Express

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mentioning

confidence: 91%

“…In the following Letter we present angle resolved photoemission spectroscopy (ARPES) measurements showing how H:C[100] attains a useful NEA surface by means of strong electron-optical phonon (e-ph) coupling and a breakdown of the sudden approximation. This mechanism is potentially germane to not only NEA emission but also to a range of recently demonstrated diamond based devices [2][3][4].The vast majority of PES experiments performed on H:C[100] have been carried out using photon energies well in excess of E g ([5, 6] for example). A notable exception to this trend was the recent laser PES experiment [7] carried out at a photon energy of 7 eV.…”

mentioning

confidence: 99%

Properties of Hydrogen Terminated Diamond as a Photocathode

et al. 2011

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Electron emission from the negative electron affinity (NEA) surface of hydrogen terminated, boron doped diamond in the [100] orientation is investigated using angle resolved photoemission spectroscopy (ARPES). ARPES measurements using 16 eV synchrotron and 6 eV laser light are compared and found to show a catastrophic failure of the sudden approximation. While the high energy photoemission is found to yield little information regarding the NEA, low energy laser ARPES reveals for the first time that the NEA results from a novel Franck-Condon mechanism coupling electrons in the conduction band to the vacuum. The result opens the door to development of a new class of NEA electron emitters based on this effect.The electron affinity of a semiconductor surface is defined as χ ≡ E vac − E CBM where E vac is the "binding energy" of the vacuum level and E CBM is that of the conduction band minimum. Semiconductors for which the electron affinity is negative, meaning that E vac lies within the band gap, are prized for their unique potential as advanced electron emitters [1]. This is because a negative electron affinity (NEA) surface generally leads to very efficient emission of electrons into the vacuum. The emitted beams also often possess characteristics such as narrow energy spread and low emittance that are highly desirable for use in devices such as electron microscopes, photoinjectors for free electron lasers and the recently demonstrated diamond electron amplifier [2]. Most NEA surfaces are difficult to prepare and maintain, usually requiring the deposition of alkali metals on a specially prepared surface and which exhibit a subsequently short operational lifetime. The [100] surface of hydrogen terminated diamond (H:C[100]) has proven to be a remarkable exception. A χ on the order of -1 eV is repeatedly obtainable by a simple annealing procedure and the surface is robust against exposure to air and other contaminants. H:C[100] achieves this feat through the combination of its large band gap E g = 5.5 eV and robust H terminated surface, stable up to 800 o C, that drives E vac into the band gap.Interest in diamond has been recently rekindled due to the increasing availability of economically viable, devicequality, synthetic crystals as well as the obvious advantages of functionalizing a material possessing such exceptional thermal, electrical and mechanical properties. It is therefore remarkable that no agreed upon mechanism for NEA emission from H:C[100] has been established. In the following Letter we present angle resolved photoemission spectroscopy (ARPES) measurements showing how H:C[100] attains a useful NEA surface by means of strong electron-optical phonon (e-ph) coupling and a breakdown of the sudden approximation. This mechanism is potentially germane to not only NEA emission but also to a range of recently demonstrated diamond based devices [2][3][4].The vast majority of PES experiments performed on H:C[100] have been carried out using photon energies well in excess of E g ([5, 6] for example). A notable e...

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“…Diamond is proving an increasingly important material in optical and electronic devices due to its excellent non-linear (Raman) [1,2], mechanical and thermal properties. Diamond's unrivalled thermal conductivity (>1500Wm −1 K −1 @300K) [3] is over 50 times greater than that of sapphire (27Wm −1 K −1 ) [4] , making it an ideal material for heatspreading.…”

Section: Introductionmentioning

confidence: 99%

Direct bonding diamond to zinc selenide

Stenhouse

Beecher

Mackenzie

2017

Opt. Mater. Express

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Abstract:We report direct bonding of 5mm x 500µm thick polycrystalline CVD-grown diamond to 25mm x 4mm ZnSe via a plasma-assisted technique. In addition, diamond to C-cut sapphire bonding is demonstrated via the same approach. Durability of the diamond/ZnSe bond is tested over a temperature range -40 to 150 • C and under various ramp rates, demonstrating strong adhesion over the majority of the bond up to a temperature of 80 • C. Optical transmission at a wavelength of 1µm shows near ideal transmission when compared to bare ZnSe. Heatspreading performance of the bonded composite is investigated using a pump-probe arrangement, demonstrating at least two-orders of magnitude reduction in the thermal-lens power compared to ZnSe alone.

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Highly efficient diamond Raman laser

Cited by 97 publications

References 9 publications

16 W continuous-wave Raman laser using low-loss synthetic diamond

16 W continuous-wave Raman laser using low-loss synthetic diamond

Properties of Hydrogen Terminated Diamond as a Photocathode

Direct bonding diamond to zinc selenide

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