Highly efficient 1D p-Te/2D n-Bi2Te3 heterojunction self-driven broadband photodetector

Mixed-Dimensional PtSe2/Bi2Te3/Pyramid Si Heterojunction with a Light-Trapping Structure for Highly Sensitive Ultrabroadband Photodetection

“…As critical parameters of a photodetector, the responsivity (R) and specific detectivity (D*) can be calculated to be 620 mA/W and 1.37 × 10 12 cm Hz 1/2 W −1 (Jones), respectively, according to Formulae S2 and S3, as demonstrated in Figure 3d. Besides, the such performances are not only superior to those of PtSe 2 /Bi 2 Te 3 /planar Si (0.55 A/W, 6.74 × 10 11 @980 nm) and Bi 2 Te 3 /pyramidal Si (0.58 A/W, 8.91 × 10 11 @980 nm), as shown in Figure S8 and Table S2, but also better than the reported results, such as CuO/Si pyramids (0.28 A/W, 1.18 × 10 11 Jones@810 nm), 34 MoS 2 / Al 2 O 3 /Si NWs (0.61 A/W, 1.48 × 10 12 Jones@808 nm), 35 Bi 2 Te 3 nanoplates (55.06 mA/W, 5.92 × 10 7 Jones@850 nm), 36 Te/Bi 2 Te 3 (12.07 mA/W, 5.87 × 10 10 Jones@365 nm), 37 Bi 2 Te 3 /PbS (16 mA/W, 1.6 × 10 10 Jones@660 nm), 38 Bi 2 Te 3 /Si (3.64 mA/W, 2 × 10 10 Jones@1064 nm), 39 Ga 2 O 3 / Bi 2 Se 3 /p-Si (1.38 mA/W, 3.22 × 10 10 Jones@254 nm), 40 property after it was stored in atmosphere for 6 months without any protection. We further investigate the image sensing capability of an 8 × 8 integrated PtSe 2 /Bi 2 Te 3 /pyramid Si heterojunction photodetector array.…”

Green Synthesis and Morphological Evolution for Bi2Te3 Nanosystems via a PVP-Assisted Hydrothermal Method

“…The OR mechanism is a thermodynamically driven spontaneous process in which energetic factors will cause the larger particles to grow at the expense of smaller grains. Here, smaller primary particles dissolves and re-precipitates on the surface of larger particles, yielding surfaces will be eliminated, leading to lowering the surface free energy, obeying thermodynamic rules [68]. A perfect OA process will yield defect-free and single crystalline nanoparticles through the attachment of primary particles in an irreversible and strongly oriented manner.…”

Self-Assembled BiGaSeAs Composite Superlattice-Structured Nanowire for Broad-Band Photodetection

“…Broad-band photodetectors, which are widely used in many fields such as life sciences, image sensing, optical communication, agriculture, industry, and many other fields of scientific research and industrial technology, are regarded as the pivotal components of the modern miniaturized electronics industry. − Commercial broad-band photodetectors are typically composed of traditional bulk semiconductor materials such as GaAs, GaN, HgCdTe, and antimonide superlattices. − However, their development is still limited by complex preparation techniques, high costs, and a lack of mechanical strength and flexibility, which are difficult to satisfy in light of the increasing demand for flexible and wearable optoelectronics. − Therefore, researchers have been devoting their efforts to finding new strategies to obtain flexible, stable, high-performance broad-band photodetectors . Thereinto, the improvement of device structure design and the material’s own performance enhancement are both worthy of the in-depth research direction .…”