2015
DOI: 10.1038/srep14815
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Highly Effective Conductance Modulation in Planar Silicene Field Effect Devices Due to Buckling

Abstract: Silicene is an exciting two-dimensional material that shares many of graphene’s electronic properties, but differs in its structural buckling. This buckling allows opening a bandgap in silicene through the application of a perpendicular electric field. Here we show that this buckling also enables highly effective modulation of silicene’s conductance by means of an in-plane electric field applied through silicene side gates, which can be realized concurrently within the same silicene monolayer. We illustrate th… Show more

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Cited by 13 publications
(8 citation statements)
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“…In Fig. 1(b) , the electron flux, n ij , traveling through the tunnel between two given reservoirs, can be computed by Landauer equation 16 17 as…”
Section: Resultsmentioning
confidence: 99%
“…In Fig. 1(b) , the electron flux, n ij , traveling through the tunnel between two given reservoirs, can be computed by Landauer equation 16 17 as…”
Section: Resultsmentioning
confidence: 99%
“…The low current on/off ratio is an indication of the small bandgap of silicene (∼210 meV). 160 This form of silicene was used to fabricate a self-switching diode (SSD), 207 permitting modulation of conductance.…”
Section: Electronic and Optoelectronicmentioning
confidence: 99%
“…The same method was used and is described in previous work. 49,50,[62][63][64] Calculation of absolute change in conductance…”
Section: Calculation Of I-v Characteristicsmentioning
confidence: 99%