Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization

Kim, Hye mi; Choi, Suhwan; Jeong, Hyun‐Jun; Lee, Jung Hoon; Kim, Junghwan; Park, Jin‐Seong

doi:10.1021/acsami.1c06038

Cited by 30 publications

(30 citation statements)

References 46 publications

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“…As a result, it has been challenging to develop high-performance p-type metal oxide semiconductors. Nevertheless, with the great research efforts, the charge transport characteristics of p-type metal oxide semiconductors such as copper (II) oxide (CuO) [ 85 , 86 ], and tin (II) oxide (SnO) [ 87 , 88 ] have been improved, which expands their applicability into metal oxide semiconductor-based complementary inverters and logic circuits.…”

Section: Vertically Integrated Electronic Devices Based On Emerging S...mentioning

confidence: 99%

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

et al. 2022

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Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate a large number of transistor devices per unit area. This approach has emerged to accommodate the higher demand of data processing capability and to circumvent the scaling limitation. A huge number of research efforts have been attempted to demonstrate vertically stacked electronics in the last two decades. In this review, we revisit materials and devices for the vertically integrated electronics with an emphasis on the emerging semiconductor materials that can be processable by bottom-up fabrication methods, which are suitable for future flexible and wearable electronics. The vertically stacked integrated circuits are reviewed based on the semiconductor materials: organic semiconductors, carbon nanotubes, metal oxide semiconductors, and atomically thin two-dimensional materials including transition metal dichalcogenides. The features, device performance, and fabrication methods for 3D integration of the transistor based on each semiconductor are discussed. Moreover, we highlight recent advances that can be important milestones in the vertically integrated electronics including advanced integrated circuits, sensors, and display systems. There are remaining challenges to overcome; however, we believe that the vertical 3D integration based on emerging semiconductor materials and devices can be a promising strategy for future electronics.

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Section: Vertically Integrated Electronic Devices Based On Emerging S...mentioning

confidence: 99%

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

et al. 2022

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“…The excellent device integrity was closely related to the process temperature, and the field-effect mobility, on/off ratio, and subthreshold swing ( SS ) values obtained in this study are the best-reported data for top-gate p-TFT devices. In the same year, Kim et al obtained SnO films with a density of 6.4 g/cm and high Hall mobility close to 5 cm 2 ·V −1 ·s −1 by growing highly c-axis-oriented SnO in the initial stage [ 69 ], followed by further crystallization along the in-plane direction via a post-annealing process. The prepared SnO-TFT had a field-effect mobility of up to 6.0 cm 2 ·V −1 ·s −1 , which is a rather high value compared to the long-term stability of SnO-TFTs reported thus far.…”

Section: P-type Sno Tftsmentioning

confidence: 99%

Research Progress of p-Type Oxide Thin-Film Transistors

et al. 2022

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The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

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“…The development of oxide semiconductors has attracted significant interest due to their compatibility with low-temperature processes to support many emerging applications, including transparent and flexible displays and transparent complementary metal-oxide semiconductor (CMOS) circuits. , For instance, transparent amorphous InGaZnO with mobility greater than 10 cm 2 V –1 s –1 has been successfully fabricated at room temperature and has proven to be useful in driving thin-film transistors in flat panels and flexible displays. , Unfortunately, p-type oxide semiconductors with mobility comparable to n-type semiconductors are difficult to achieve because the valence band (VB) as a hole conduction pathway in these materials inherently consists of highly localized and anisotropic O 2p orbitals . It is their poor p-type properties that hinder the application of oxide semiconductors in low-power and high-performance transparent CMOS logic circuits, where a balanced performance across the p- and n-type devices is essential. , Recently, several oxide materials have been proposed to produce high-performance transparent p-type semiconductors, including copper-based ternary oxides (CuMO 2 , M = Al, Ga, In, etc. ), spinel oxides (ZnM 2 O 4 , M = Rh, Co, Ir, etc.…”

Section: Introductionmentioning

confidence: 99%

“…To date, the feasibility of p-type conductivity in SnO has been experimentally demonstrated using several techniques, including reactive magnetron sputtering, ,, atomic layer deposition, , pulsed laser deposition, ,, e-beam evaporation, ,, and solution process. , However, the performance of the prepared SnO still varies greatly depending on the type of sample and the resulting crystal structure. For bulk SnO polycrystals, a hole mobility as high as 30.0 cm 2 V –1 s –1 has been reported .…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Fabrication of p-Type SnO Semiconductors Using Ion-Beam-Assisted Deposition

Januar

Prakoso

Zhong

et al. 2022

ACS Appl. Mater. Interfaces

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Over the past decade, SnO has been considered a promising p-type oxide semiconductor. However, achieving high mobility in the fabrication of p-type SnO films is still highly dependent on the post-annealing procedure, which is often used to make SnO, due to its metastable nature, readily convertible to SnO2 and/or intermediate phases. This paper demonstrates a fully room-temperature fabrication of p-type SnO x thin films using ion-beam-assisted deposition. This technique offers independent control between ion density, via the ion-gun anode current and oxygen flow rate, and ion energy, via the ion-gun anode voltage, thus being able to optimize the optical band gap and the hole mobility of the SnO films to reach 2.70 eV and 7.89 cm2 V–1 s–1, respectively, without the need for annealing. Remarkably, this is the highest mobility reported for p-type SnO films whose fabrication was carried out entirely at room temperature. Using first-principles calculations, we rationalize that the high mobility is associated with the fine-tuning of the Sn-rich-related defects and lattice densification, obtained by controlling the density and energy of the oxygen ions, both of which optimize the spatial overlap of the valence bands to form a continuous conduction path for the holes. Moreover, due to the absence of the annealing process, the Raman spectra reveal no significant signatures of microcrystal formation in the films. This behavior contrasts with the case involving the air-annealing procedure, where a complex interaction occurs between the formation of SnO microcrystals and the formation of SnO x intermediate phases. This interplay results in variations in grain texture within the film, leading to a lower optimum Hall mobility of only 5.17 cm2 V–1 s–1. Finally, we demonstrate the rectification characteristics of all-fabricated-at-room-temperature SnO x -based p–n devices to confirm the viability of the p-type SnO x films.

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Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization

Cited by 30 publications

References 46 publications

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

Research Progress of p-Type Oxide Thin-Film Transistors

Room-Temperature Fabrication of p-Type SnO Semiconductors Using Ion-Beam-Assisted Deposition

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