Highly conductive ultrathin Co films by high-power impulse magnetron sputtering

Jablonka, Lukas; Riekehr, Lars; Zhang, Zhen; Zhang, Shi-Li; Kubart, Tomáš

doi:10.1063/1.5011109

Cited by 17 publications

(8 citation statements)

References 22 publications

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“…It has been reported that Cu − and W, , which are currently used for local interconnect, rapidly increase resistivity based on thickness scaling at several tens of nanometers. Even in the case of Ru − and Co, , which are next-generation wiring materials with low resistivity, an increase in resistivity was mostly observed at the level of 10 nm, and there was no report that the resistivity was maintained up to a thickness of below 5 nm. Therefore, the MoC x thin film deposited using the IM-02 can be very attractive as a new material that can solve issues such as RC delay, increased power consumption, and increased noise in highly scaled devices with metal line widths reduced to the sub-10 nm scale.…”

Section: Resultsmentioning

confidence: 99%

Ultralow-Resistivity Molybdenum-Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-Based Precursor

Kim²,

Choi

et al. 2022

Chem. Mater.

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As memory devices become ultraminiaturized, the increase in the resistance of the metal line due to the decrease in the line width has become a very critical issue. Mo-based materials have been studied as candidates for next-generation metal line materials because of their low resistivity at low thickness and excellent oxidation resistance. However, the development of precursors suitable for vapor deposition methods (such as atomic layer deposition) is immature. In this study, we propose an ultralow-resistivity MoC x thin film using a cyclopentadienyl-based precursor as a new metal line candidate. Using a halogen-free liquid precursor, MoC x thin films were successfully deposited by plasma-enhanced atomic layer deposition (PEALD) in a wide process window of 200–300 °C. We confirmed that uniform and continuous films were deposited on the SiO2 substrates without any significant incubation period. The most important result of this study is that as-deposited MoC x thin films exhibited an ultralow resistivity of 8–20 μΩ·cm, and such ultralow resistivity was maintained even with a thickness as thin as 4.25 nm and after rapid thermal annealing up to 600 °C. This is the lowest resistivity value of the reported metal line candidate materials available at the sub-10 nm device scale level. The ultralow resistivity at a very thin thickness and excellent thermal stability suggest the possibility that the MoC x thin films proposed in this study can be applied in various applications as a next-generation metal line material in the semiconductor industry.

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Section: Resultsmentioning

confidence: 99%

Ultralow-Resistivity Molybdenum-Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-Based Precursor

Kim²,

Choi

et al. 2022

Chem. Mater.

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“…21,22 Thus, thin films with excellent properties can be obtained via BP-HiPIMS. 23,24 Figure 1a shows the voltage pulses applied to the sputter target in BP-HiPIMS. A negative voltage sputter pulse (T1) followed by a positive voltage pulse (T3) is applied to the sputter target.…”

Section: Bipolar High-power Impulse Magnetron Sputteringmentioning

confidence: 99%

Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique

Seo¹,

Cho²,

Kang³

et al. 2022

ECS J. Solid State Sci. Technol.

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Owing to the rapid growth of very large-scale integration technology at nanometer scales, cobalt and ruthenium interconnects are being used to solve the high-resistivity copper problem. However, with such interconnects, carbon contamination can occur during chemical vapor deposition and atomic layer deposition. Bipolar (BP) high-power impulse magnetron sputtering (HiPIMS) with a high ionization rate is an excellent vacuum process for depositing low-resistivity thin films. In this study, low-resistivity cobalt, ruthenium, and copper thin films were deposited using BP-HiPIMS, HiPIMS, and direct-current magnetron sputtering (MS). The resistivities of the cobalt, ruthenium, and copper thin films (<10 nm) deposited via BP-HiPIMS were 91.5, 75, and 35%, respectively, lower than the resistivities of the same film materials deposited using direct-current MS. To solve the low pass-through flux of cobalt, the target temperature was raised to the Curie temperature (approximately 1100 °C) using a thermal insulation backplate (Ti-6Al-4V), resulting in a resistivity reduction of about 73%. The study provides a novel method for the vacuum deposition of cobalt and ruthenium thin films.

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“…A possible explanation is that the film is nanocrystalline and the crystallinity cannot detected in h-2h scans, although it may be detected by grazing-incidence x-ray diffraction (GIXRD). 32 The cobalt signal emerges after annealing the film at 600 C at 2h ¼ 44:3 , correspondig to cubic (111), and around 2h ¼ 52 , corresponding to cubic (200). 26 The film likely forms large polycrystalline grains at this anneal temperature that can be detected by the h-2h scan.…”

Section: Structural Characterizationmentioning

confidence: 99%

Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide

Ekström

Ferrario

Zetterling

2019

Journal of Elec Materi

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Highly conductive ultrathin Co films by high-power impulse magnetron sputtering

Cited by 17 publications

References 22 publications

Ultralow-Resistivity Molybdenum-Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-Based Precursor

Ultralow-Resistivity Molybdenum-Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-Based Precursor

Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique

Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide

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