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2011
DOI: 10.1016/j.ssc.2010.10.004
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Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors

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Cited by 14 publications
(5 citation statements)
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“…Intrinsic organic semiconducting fi lms show poor electric conductivities [ 1 ] due to their low charge carrier densities and charge hopping transport. [ 2 ] However, recent studies have shown that some organic-organic and inorganic-organic pairs with strong charge interaction show much higher conductivities along their interfaces.…”
Section: Introductionmentioning
confidence: 99%
“…Intrinsic organic semiconducting fi lms show poor electric conductivities [ 1 ] due to their low charge carrier densities and charge hopping transport. [ 2 ] However, recent studies have shown that some organic-organic and inorganic-organic pairs with strong charge interaction show much higher conductivities along their interfaces.…”
Section: Introductionmentioning
confidence: 99%
“…To lower the turn‐on voltage, high work function anode is needed to match the deep HOMO energy level of host material, allowing holes freely injecting to the crystal emissive layer. Here, we use anode buffer layer consisting of the transition metal oxide to further enhance the work function of anode, similar to their roles of modifying the work function of graphene and indium tin oxide (ITO) electrodes in organic electronics . A transition metal oxide interface layer, MoO 3 (5.3 eV), is subsequently deposited by thermal evaporation on top of the Au electrode (Figure b) .…”
Section: Resultsmentioning
confidence: 99%
“…Metal oxides (like MoO x ) have been extensively investigated as a strong electron‐accepting agent, which can significantly reduce the barrier for hole injection between the metal electrode and an organic layer without effects on carrier mobility. After introducing a MoO x layer to ambipolar crystal‐based OLETs, the formed highly conductive layer allows a high carrier density (>100 A cm −2 ) in the recombination zone, resulting in excellent ambipolar operation . A significant decrease of hole accumulation threshold voltage was reported in an OLET based on P5V4 crystals with an Au/MoO x layer.…”
Section: Light‐emitting Devices Of Oscssmentioning
confidence: 99%