“…Intrinsic organic semiconducting fi lms show poor electric conductivities [ 1 ] due to their low charge carrier densities and charge hopping transport. [ 2 ] However, recent studies have shown that some organic-organic and inorganic-organic pairs with strong charge interaction show much higher conductivities along their interfaces.…”
High electric conductivity is observed in multilayer stack of m‐MTDATA/F16CuPc. Impedance data shows that the circuit resistance is significantly dropped by three orders of magnitude from ∼0.2 MΩ to ∼0.4 kΩ when the number of alternating units is increased from one to six, keeping a total thickness of 300 nm. Impedance results show that as the number of alternating units increases, the organic stack shows an increasing capacitance and a decreasing resistance. This result suggests the increasing charges accumulate at the heterojunctions, leading to reduction in overall film resistance. The application of the high conductive units in OLED device results in stability enhancement.
“…Intrinsic organic semiconducting fi lms show poor electric conductivities [ 1 ] due to their low charge carrier densities and charge hopping transport. [ 2 ] However, recent studies have shown that some organic-organic and inorganic-organic pairs with strong charge interaction show much higher conductivities along their interfaces.…”
High electric conductivity is observed in multilayer stack of m‐MTDATA/F16CuPc. Impedance data shows that the circuit resistance is significantly dropped by three orders of magnitude from ∼0.2 MΩ to ∼0.4 kΩ when the number of alternating units is increased from one to six, keeping a total thickness of 300 nm. Impedance results show that as the number of alternating units increases, the organic stack shows an increasing capacitance and a decreasing resistance. This result suggests the increasing charges accumulate at the heterojunctions, leading to reduction in overall film resistance. The application of the high conductive units in OLED device results in stability enhancement.
“…To lower the turn‐on voltage, high work function anode is needed to match the deep HOMO energy level of host material, allowing holes freely injecting to the crystal emissive layer. Here, we use anode buffer layer consisting of the transition metal oxide to further enhance the work function of anode, similar to their roles of modifying the work function of graphene and indium tin oxide (ITO) electrodes in organic electronics . A transition metal oxide interface layer, MoO 3 (5.3 eV), is subsequently deposited by thermal evaporation on top of the Au electrode (Figure b) .…”
Organic single crystals have a great potential in the field of organic optoelectronics because of their advantages of high carrier mobility and high thermal stability. However, the application of the organic single crystals in light‐emitting devices (OLEDs) has been limited by single‐layered structure with unbalanced carrier injection and transport. Here, fabrication of a multilayered‐structure crystal‐based OLED constitutes a major step toward balanced carrier injection and transport by introducing an anodic buffer layer and electron transport layer into the device structure. Three primary color single‐crystal‐based OLEDs based on the multilayered structure and molecular doping exhibit a maximum luminance and current efficiency of 820 cd cm−2 and 0.9 cd A−1, respectively, which are the highest performance to date for organic single‐crystal‐based OLEDs. This work paves the way toward high‐performance organic optoelectronic devices based on the organic single crystals.
“…Metal oxides (like MoO x ) have been extensively investigated as a strong electron‐accepting agent, which can significantly reduce the barrier for hole injection between the metal electrode and an organic layer without effects on carrier mobility. After introducing a MoO x layer to ambipolar crystal‐based OLETs, the formed highly conductive layer allows a high carrier density (>100 A cm −2 ) in the recombination zone, resulting in excellent ambipolar operation . A significant decrease of hole accumulation threshold voltage was reported in an OLET based on P5V4 crystals with an Au/MoO x layer.…”
Section: Light‐emitting Devices Of Oscssmentioning
Organic single‐crystalline semiconductors (OSCSs), as a vital branch of organic semiconductors, have recently attracted intense interest due to their numerous advantages such as highly ordered structure, high carrier mobility, high thermal stability, and low impurity levels, and they have worldwide use in different kinds of applications. In particular, the nature of better luminescence properties and remarkable charge‐transport characteristics is a prerequisite for light‐emitting aspects. Here, a concise overview of the recent progress on OSCSs research is provided, highlighting the prominent properties of OSCSs which are pertinent to light‐emitting behavior. Various crystal‐growth strategies are surveyed for the preparation of high‐quality OSCSs via solution, melting, and vapor phases. Two typical electrical‐pumping light‐emitting devices, including organic light‐emitting transistors and organic light‐emitting diodes, are summarized with recent advances and developments exhibiting the latent potentialities of OSCSs in optoelectronics.
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