2007
DOI: 10.1557/jmr.2007.0179
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Highly conductive group VI transition metal dichalcogenide films by solution-processed deposition

Abstract: A new soluble synthetic route was developed to fabricate thin films of layered structure transition metal dichalcogendies, MoS2 and WS2. High-quality thin films of the dichalcogenides were prepared using new soluble precursors, (CH3NH3)2MS4 (M = Mo, W). The precursors were dissolved in organic solvents and spun onto substrates via both single- and multistep spin coating procedures. The thin films were formed by the thermal decomposition of the coatings under inert atmosphere. Structural, electrical, optical ab… Show more

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Cited by 11 publications
(10 citation statements)
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“…18 The structural and electronic properties have been studied extensively, see Ref. 19 and the references therein, as WS 2 is widely utilized for n/pdoped field effect transistors, for example. 20 Experimentally, synthesis and characterization of graphene on WS 2 have been reported in Ref.…”
Section: 2mentioning
confidence: 99%
“…18 The structural and electronic properties have been studied extensively, see Ref. 19 and the references therein, as WS 2 is widely utilized for n/pdoped field effect transistors, for example. 20 Experimentally, synthesis and characterization of graphene on WS 2 have been reported in Ref.…”
Section: 2mentioning
confidence: 99%
“…A similar approach with (CH 3 NH 3 ) 2 MS 4 (M ¼ W, Mo) dissolved in organic solvents and using an inert atmosphere anneal led to highly conducting and textured n-type MoS 2 (%50 V À1 cm À1 ) and WS 2 (%7 V À1 cm À1 ) films. [100] Amorphous As 2 S 3 and As 2 Se 3 films have also been deposited using an analogous process, [101] but attempts to deposit other main-group metal chalcogenides, such as Sb 2 S 3 and GeS x were not successful, due to the low solubility [102] The use of hydrazine as a solvent may therefore offer benefits in terms of providing for a wider range of compatible materials for deposition, and perhaps with respect to a cleaner (no carbon) and lower-temperature decomposition pathway.…”
Section: Similar Deposition Approaches Without Hydrazinementioning
confidence: 99%
“…Wet chemical approaches in producing monolayers of MoS 2 via low temperature thermal decomposition of a single source precursor containing both Mo metal and S have also been demonstrated 66, 67. In a wet chemical approach, ammonium tetramolybdate ((NH 4 ) 2 MoS 4 ) has been stirred in oleylamine and allowed to decompose at elevated temperatures 66.…”
Section: Synthesis Of Layered Crystalsmentioning
confidence: 99%