Highly conducting phosphorous doped n-type nc-Si:H films by HW-CVD for c-Si heterojunction solar cells

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma

“…Therefore, it is concluded that both X C and crystallite size were reduced when the dopant was introduced in the Si films. These results agree with amorphization in the doped Si network due to the local deformation caused by dopant atoms …”

“…Generally, the doping efficiency of Si films prepared by HWCVD is about 10–20%; in contrast, a higher doping efficiency (10–50%) can be obtained for Si films synthesized by PECVD . Si film with a crystalline phase exhibits higher doping efficiency compared with the amorphous phase, which is also a well-known fact . In our study, the doping efficiency for both doped Si films under the appropriate conditions was >40%, consistent with the trend of X C and with the independence of the two solid doping sources used.…”

“…It is well accepted that the σ value of the Si film is determined by the crystallinity and C C value . The initial increase in σ of doped Si film prepared through the proposed method is mainly attributed to the increase in the C C .…”

“…To meet the demand for high-efficiency flexible Si film solar cells (Si-SCs), the fabrication of undoped and doped crystalline Si films is essential, as it involves construction of an n – i – p structure on the polymer substrate using a low-temperature technique. The crystalline Si film exhibits unique electronic and photovoltaic properties, such as high carrier mobility, enhanced absorption in the red/infrared wavelength range, and high doping efficiency compared with its amorphous counterpart. , Because of its highly ordered structure, crystalline Si film is also highly stable against light-induced degradation . The most important characteristic of doped crystalline Si film is high electrical conductivity, which reduces the series resistance during conduction of photocurrent through an electrode and creates a built-in electric field that separates photogenerated charge carriers …”

Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment

“…13 The key requirement for high efficiency of heterojunction solar cells is a low amount of recombination at the silicon surfaces, which can be achieved by introducing an intrinsic a-Si:H passivation layer. 14,15 Nolan et al 16 reported interface models of amorphous-crystalline silicon which is generated on Si(100), (110) and (111) surfaces. In particular, they found that the least stable (100) surface will result in the formation of the thickest amorphous silicon layer with the highest density of co-ordination defects, while the most stable (110) surface formed the smallest amorphous region with the least defects.…”