Highly aligned organic semiconductor thin films grown by hot wall epitaxy

Andreev, A.; Sitter, H.; Resel, Roland; Smilgies, Detlef‐M.; Hoppe, Harald; Matt, G.; Sariciftci, Niyazi Serdar; Meißner, D.; Lysáček, David; Válek, Lukáš

doi:10.1080/713738789

Cited by 8 publications

(3 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is based on the reasonable assumption that finite size effects play the major role for peak broadening, whereas strain effects in organic crystallites are small [23,24]. A rocking curve mirrors the alignment of the investigated crystal plane relative to the substrate surface, and thus the full-width at half-maximum (FWHM) is a measure for the quality of the alignment (mosaicity) [25].…”

Section: Methodsmentioning

confidence: 99%

Evolution of epitaxial order in para-sexiphenyl on KCl(100)

Haber

Resel

Andreev

et al. 2010

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Methodsmentioning

confidence: 99%

Evolution of epitaxial order in para-sexiphenyl on KCl(100)

Haber

Resel

Andreev

et al. 2010

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Some of the extraordinary features shown in Fig. 2 can be explained qualitatively (see also [23,24]) in terms of strain-induced heteroepitaxial island growth, well known in inorganic heteroepitaxy. For example, Tersoff and Tromp [25] have predicted theoretically a strain-induced, spontaneous shape transition from compact square islands to elongated ones of asymptotic constant width.…”

Section: Resultsmentioning

confidence: 92%

“…In all three cases the alignment of the long molecular axes relative to the substrate is approximately the same. Nevertheless, a high degree of epitaxial alignment was observed by rocking curves with a FWHM as low as 0.06° [23].…”

Section: Resultsmentioning

confidence: 96%

Organic thin films grown by hot wall epitaxy on inorganic substrates

Sitter¹,

Andreev²,

Teichert

et al. 2005

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

In this work we use Atomic Force Microscopy and X-ray diffraction to study the morphology and thegrowth kinetics of para-sexiphenyl layers deposited by hot wall epitaxy on crystalline mica (001) and KCl (001) substrates. It is shown that para-sexiphenyl forms on mica very long parallel oriented crystalline needles with one preferential direction. In contrast, on KCl (001) the growth is characterized by a coexistence of long needles ("laying" molecules) and terrace structured islands ("standing" molecules). The former belong to the initial growth stage of the films, generating a rectangular network in accordance with the surface symmetry of the substrate.

show abstract

Solution‐Processed Thin Films of Thiophene Mesogens with Single‐Crystalline Alignment

et al. 2006

Self Cite

View full text Add to dashboard Cite

Highly ordered thin films of organic materials are receiving a great deal of attention as active layers in a new generation of plastic electronic devices, particularly in organic field-effect transistors (OFETs).[1] Numerous organic-film preparation technologies have been tested over the past few decades. For commercial organic electronics, solution-processed, low-cost technologies such as spin-coating, inkjet printing, and screenprinting are preferred.[2] Mostly, these methods produce thin films with moderate structural order from soluble polymers and oligomers. The relevant physical parameters (e.g., chargecarrier mobilities) of thin organic films are strongly affected by the orientation, distribution, and size of the domains and domain boundaries, [3] and, more generally, by the degree of structural order. The endeavor to improve molecular alignment in active organic layers has led to the implementation of high-quality organic single crystals in OFETs with optimized performance.[4] However, recent methods for the fabrication of single-crystal devices are rather complex and inappropriate for practical applications.[5] Therefore, suitable organic compounds and preparation methods that yield highly ordered thin films are quite essential for progress in this field.In this paper, we present highly ordered thin films of 5,5″-bis(5-hexyl-2-thienylethynyl)-2,2′:5′,2″-terthiophene (TR5-C6) prepared from solution by spin-coating and subsequent thermal treatment, and studied using X-ray diffraction (XRD) techniques. The calamitic TR5-C6 molecule consists of a central terthiophene unit with acetylene linkages connecting two terminal thiophene rings with hexyl end groups (Fig. 1a).The thermotropic liquid crystalline behavior of TR5-C6 has been studied by differential scanning calorimetry (DSC), and the mesophases have been assigned by polarized optical microscopy. During cooling, exothermic phase transitions from the nematic to the smectic C phase at 115°C, from the smectic C to the smectic B phase at 109°C, and from the smectic B COMMUNICATIONS 896

show abstract

Highly aligned organic semiconductor thin films grown by hot wall epitaxy

Cited by 8 publications

References 2 publications

Evolution of epitaxial order in para-sexiphenyl on KCl(100)

Evolution of epitaxial order in para-sexiphenyl on KCl(100)

Organic thin films grown by hot wall epitaxy on inorganic substrates

Solution‐Processed Thin Films of Thiophene Mesogens with Single‐Crystalline Alignment

Contact Info

Product

Resources

About