Highly Accurate Analytic Modeling of Dispersive Field Distributions in MIM Capacitances With Electrodes Thinner Than Skin Depth

High performance all-oxide thin film tunable capacitors on Si substrates for agile microwave applications

“…21,22 The frequency dependence of the quality factor Q(f ) curve was fitted, using equivalent circuit model shown in Figure 1 with the room-temperature resistivity of the SrMoO 3 film as a fitting parameter. 17 The obtained SrMoO 3 resistivity of 44 µΩ • cm corresponds well to the room-temperature resistivity of the 70 nm thick SrMoO 3 film grown on the (001) Si substrate covered with SrTiO 3 buffer layer.…”

“…The layout of the varactor test structures is shown in Figure 1 along with the equivalent circuit used for the analysis of the varactor performance. 17 The top electrode of the varactor test structures consists of a central circular patch with various diameters of 20 µm to 60 µm, surrounded by a concentric ring-shaped ground plane with various inner diameter of 40 µm to 80 µm and an outer diameter of 350 µm (Fig. 1).…”

Equivalent circuit fitting method for microwave characterisation of low-k dielectric thin films

“…The advantage of this method is that it allows for the analysis of many devices at once, thus reducing the noise, and provides more flexibility in the equivalent circuit used. For instance, corrections due to a parasitic capacitance through the substrate oxide as seen in [30], parasitic loss through the substrate [32], or additional inductance at the probes [31] could all be taken into account if relevant to the problem. Here, since a parasitic capacitance in the fFrange between the inner and outer disks is expected, as discussed above, it is included in the circuit.…”

“…However, the method proposed by Ma et al is sensitive to parasitics, which can reduce the accuracy of the extracted permittivity. This includes the presence of a parasitic capacitance through the substrate when the sample is placed on a metallic chuck [30], an additional probe contact resistance or inductance due to miscalibration [31], a substrate loss for highly resistive bottom electrodes [32], or distributed effects in the inner disk at high frequencies [31]. This was partially alleviated by the work of Rundqvist et al [16] who proposed several modifications to the original analysis method to include a more thorough treatment of the losses, allowing measurements of the dielectric permittivity and loss tangent up to 50 GHz.…”