Highly (222)-oriented pyrochlore PZN-PT thin films prepared by pulsed laser deposition

Abstract

Highly (222)-oriented 90%Pb(Zn 1/3 Nb 2/3 )O 3 -10%PbTiO 3 (abbreviated PZN-PT) thin films, about 550nm in thickness, have been successfully grown on (111)Pt/Ti/SiO 2 /Si substrate by pulsed laser deposition method. Pure pyrochlore phase with highly (222)-preferred orientation, determined by X-ray diffraction, was formed in the PZN-PT thin films when the temperature of substrates is 550 °C. FE-SEM investigation shows that the surface appearance and the cross section of the films are smooth and crack-free with some dispersive spherical protrusions. The dielectric constant and loss of the thin films were measured using an impedance analyzer (HP4194A). The dielectric constant ( r ε ) and the dissipation factor ( tanδ ) at 1 kHz are 205 and 0.03, respectively.