Highly (100)-orientated SnSe thin films deposited by pulsed-laser deposition

Gong, Xiangnan; Feng, Menglei; Wu, Hong; Zhou, Hongpeng; Suen, Chun-Hung; H, Zou; Guo, Liang; Chen, Shijian; Dai, Jiyan; Wang, Guoyu; Zhou, Xiaoyuan

doi:10.1016/j.apsusc.2020.147694

Cited by 15 publications

(12 citation statements)

References 42 publications

(40 reference statements)

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“…All mentioned A g modes as well as the B 3g mode are rigid shear modes of a layer with respect to its adjacent layers; they determine the characteristic planar vibration modes of the SnSe orthorhombic structure. 38,41 It was also observed by Gong et al 40 that when the PLD films were annealed, the two bands peaking at ∼110 and ∼95 cm −1 tended to shift to higher wavenumbers (127 and 104 cm −1 ) and to be better resolved, which was associated with better crystallinity of the layers. The B 1g mode shows two Raman-active components (∼133 and 57 cm −1 ) in SnSe single crystals.…”

Section: Resultssupporting

confidence: 51%

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Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition

et al. 2021

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Pulsed UV laser deposition was exploited for the preparation of thin Sn50–x As x Se50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50–x As x Se50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of Sn m Se n + clusters with low m and n values were observed.

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Section: Resultssupporting

confidence: 51%

“…38−40 Using the 785 nm excitation laser, it is observed that the band at 153 cm −1 has a higher intensity compared to the other main bands than the one with excitation at 532 nm. Similarly, Gong et al 40 observed that the A 3g /A 1g intensity ratio is lower at 532 nm.…”

Section: Resultsmentioning

confidence: 71%

Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition

et al. 2021

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“…For example, at room temperature, n‐type Bi 2 Te 3 ‐based thin films were reported to have high ZT s of > 2.2 and 1.6, [ 139,140 ] n‐type Ag 2 Se thin film exhibited a high ZT of 1.2, [ 141 ] and p‐type BST, Sb 2 Te 3 , and SrTiO 3 thin films showed high ZT s of >1.5. [ 142–144 ] A few fabrication methods, such as solution method, [ 187,188 ] spray pyrolysis, [ 189 ] electrodeposition, [ 190 ] pulsed laser deposition, [ 191 ] chemical and electrochemical deposition, [ 192 ] magnetron sputtering, [ 143,193,194 ] flash evaporation, [ 195 ] atomic layer deposition, [ 196 ] hot wall epitaxy, [ 197 ] thermal evaporation, [ 198 ] brush plating, [ 199 ] and bath deposition, [ 200 ] have been used to fabricate TE films. Figure a illustrates the fabrication of Bi 2 Te 3 ‐based thick films and devices using a brush printing method.…”

Section: Fabrication and Performance Of Tecmentioning

confidence: 99%

Thermoelectric Coolers: Progress, Challenges, and Opportunities

et al. 2022

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Owing to the free of noise, mechanical component, working fluid, and chemical reaction, thermoelectric cooling is regarded as a suitable solution to address the greenhouse emission for the broad cooling scenarios. Here, the significant progress of state‐of‐the‐art thermoelectric coolers is comprehensively summarized and the related aspects of materials, fundamental design, heat sinks, and structures, are overviewed. Particularly, the usage of thermoelectric coolers in smart city, greenhouse, and personal and chip thermal management is highlighted. In the end, current challenges and future opportunities for further improvement of designs, performance, and applications of thermoelectric coolers are pointed out.

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“…Similar values were also reported by other polycrystalline SnSe thin-films deposited via different techniques. 55,56 The relatively low conductivity can be attributed to both low carrier concentration and mobility as displayed in Fig. 10b, which could be strongly linked to the scattering from the grain boundaries as well as the defects induced by the segregation of Sn in polycrystalline SnSe, 13 limiting the thermoelectric performance of the SnSe films.…”

Section: Thermoelectric Propertiesmentioning

confidence: 99%