HIGHLIGHTING OF TWO TYPES OF DEFECTS IN 1300 nm PBC LASER DIODES

Abstract

Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).