Higher mobility of charge carriers in InAs/GaAs superlattices through the elimination of InGaAs alloy disorders on GaAs

Moreira, M. V. B.

doi:10.1116/1.588134

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

1995

DOI: 10.1116/1.588134

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Higher mobility of charge carriers in InAs/GaAs superlattices through the elimination of InGaAs alloy disorders on GaAs

M. V. B. Moreira¹

Abstract: High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant-induced disorder is eliminated Appl.

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2002

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Chemical and structural effects of two-dimensional isovalent substitutions inA(III)−B(V)semiconductors

2002

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The empirical pseudopotential method is used to study the electronic properties of two-dimensional isovalent substitutions in A(III)-B(V) semiconductors in a periodic modelling approach. Namely, for InAs/GaAs, InP/GaP, and GaN/GaAs substitution layer/host material systems the bandgap reduction and localization properties of electron and hole states are investigated. As a result we can also decide whether excitons can be effectively bound to the two-dimensional isovalent substitution layer.

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Chemical and structural effects of two-dimensional isovalent substitutions inA(III)−B(V)semiconductors

2002

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Higher mobility of charge carriers in InAs/GaAs superlattices through the elimination of InGaAs alloy disorders on GaAs

Abstract: High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant-induced disorder is eliminated Appl.

Cited by 1 publication

References 8 publications

Chemical and structural effects of two-dimensional isovalent substitutions inA(III)−B(V)semiconductors

Chemical and structural effects of two-dimensional isovalent substitutions inA(III)−B(V)semiconductors

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