High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

Javey, Ali; Kim, Hyoungsub; Brink, Markus; Wang, Qian; Ural, Ant; Guo, Jing; McIntyre, Paul C.; McEuen, Paul L.; Lundstrom, Mark; Dai, Hongjie

doi:10.1038/nmat769

Cited by 928 publications

(757 citation statements)

References 35 publications

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“…In the case of the SWCNT FET in Figure 3a, the DIBL is ∆V th /∆V DS ) 700 mV/V, which is similar to previously reported carbon nanotube FETs with similar channel length. 9,13 Theoretical work has shown that DIBL in short-channel SWCNT FETs can be reduced by implementing a double-gate, triple-gate, or surround-gate device structure. 17 Combining patterned bottom gate electrodes 12 with a thin, SAM-based gate dielectric 16 offers a number of advantages.…”

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confidence: 99%

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

et al. 2009

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The prospect of realizing nanoscale transistors using individual semiconducting carbon nanotubes offers enormous potential, both as an alternative to silicon technology beyond conventional scaling limits and as a way to implement high-speed devices and circuits on flexible substrates. A significant challenge is the realization of low-voltage nanotube transistors with individually addressable gate electrodes that display large transconductance, steep subthreshold swing, and large on/off ratio. Their integration into circuits with large signal gain and good stability still needs to be demonstrated. Here, we demonstrate that these important goals can be achieved with the help of a bottom-gate device structure that combines patterned metal gates with a thin gate dielectric based on a molecular self-assembled monolayer. The obtained transistors operate with a gate-source voltage of 1 V and have a transconductance of 5 µS, a subthreshold swing of 68 mV/decade, and an on/off ratio of 10 7 . To verify the excellent operational and shelf life stability, we show that the device performance does not degrade during 10 000 switching cycles and during storage under ambient conditions for more than 300 days. We also demonstrate that the device structure allows the implementation of unipolar logic circuits with good switching characteristics.

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Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

et al. 2009

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“…19 The position of the Fermi level is measured by the threshold voltage, and an extensive literature has established the relationship between the threshold voltage in various device configurations and the quantity of charge induced in the nanotubes. [20][21][22] In our case, with a typical nanotube diameter of 2 nm, every 1 µm of nanotube length has a capacitance to the gate, C bg , of 15 aF. 20 The induced charge, ∆Q, is given by ∆Q ) C bg ∆V, where ∆V is the threshold shift.…”

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confidence: 99%

Integration of Cell Membranes and Nanotube Transistors

et al. 2005

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We report the integration of a complex biological system and a nanoelectronic device, demonstrating that both components retain their functionality while interacting with each other. As the biological system, we use the cell membrane of Halobacterium salinarum. As the nanoelectronic device, we use a nanotube network transistor, which incorporates many individual nanotubes in such a way that entire patches of cell membrane are contacted by nanotubes. We demonstrate that the biophysical properties of the membrane are preserved, that the nanoelectronic devices still function as transistors, and that the two systems interact. Further, we use the interaction to study the charge distribution in the biological system, finding that the electric dipole of the membrane protein bacteriorhodopsin is located 2/3 of the way from the extracellular to the cytoplasmic side.Nanobioelectronics, the integration of biological processes and molecules with nanoscale fabricated structures, offers the potential for electronic control and sensing of biological systems. 1 As a specific example, carbon nanotubes have been suggested for use as prosthetic nervous implants in organs such as eyes and ears. 2 To achieve this goal requires the parallel preparation 3 of fully functional biological systems and nanoelectronic systems that are integrated together. One major obstacle is the preservation of functionality in both systems. For example, while biological systems ranging from lipids 7 to living cells 2 have been assembled on nanotube substrates, the nanotubes have served only as mechanical supports, without electronic functionality. A second major obstacle is the difference in scale between nanostructures and biological systems. While nanotubes are comparable in size to individual proteins, they are much smaller than cells. Thus, nanotube electronic devices have been used as singlemolecule sensors 5a,7a rather than to communicate with complex biological systems. Here, we achieve integration between a functioning nanotube transistor and a cell membrane. We use nanotube networks, a recently developed class of nanotube devices, to bridge the gap in size between nanotechnology and biotechnology. To demonstrate the power of the approach, we use the nanobioelectronic devices to extract information about the charge distribution in the particular membrane used, thereby contributing to the resolution of a long-standing question about charge distributions within that membrane. 6

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“…While multiwalled CNTs (MWNTs) show complicated electrical properties, single-walled CNTs (SWNTs) are either metallic or semiconducting depending on the atomic structure [3,4]. Utilizing such electrical properties, SWNTs have been applied to demonstrate single device performance including field-effect transistor [5], random access memory [6], room-temperature single-electron transistor [7], and logic gates [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Controlled Growth of Multi-walled Carbon Nanotubes Using Arrays of Ni Nanoparticles

Ji¹,

Lee²,

Bahng³

et al. 2008

Journal of the Korean Vacuum Society

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We have investigated the optimal growth conditions of carbon nanotubes (CNTs) using the chemical vapor deposition and the Ni nanoparticle arrays. The diameter of the CNT is shown to be controlled down to below 20 nm by changing the size of Ni particle. The position and size of Ni particles are controlled continuously by using wafer-scale compatible methods such as lithography, ion-milling, and chemical etching. Using optimal growth conditions of temperature, carbon feedstock, and carrier gases, we have demonstrated that an individual CNT can be grown from each Ni nanoparticle with almost 100% probability over wide area of SiO 2 /Si wafer. The position, diameter, and wall thickness of the CNT are shown to be controlled by adjusting the growth conditions.

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High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

Cited by 928 publications

References 35 publications

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Integration of Cell Membranes and Nanotube Transistors

Controlled Growth of Multi-walled Carbon Nanotubes Using Arrays of Ni Nanoparticles

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