High‐κ Dielectric Oxides for Electronics

Zhang, Tong; Zhang, Xiaoyang; Yang, Yi; Wu, Weiping

doi:10.1002/9781119529538.ch4

Cited by 3 publications

(2 citation statements)

References 42 publications

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“…Non-Local model is used for the region interface of pocket and channel to consider tunneling in lateral direction. As the charges get trapped at oxide/Silicon interface during manufacturing process, material interface specific interface trap model is included with negative trap charge of -4.5×10 10 Coulombs. The designed poc-DG-AJLTFET is simulated for varying gate voltage with drain voltage (V ds ) of 1 V to obtain transfer characteristics, threshold voltage and its performance in subthreshold region.…”

Section: Device Description and Simulationmentioning

confidence: 99%

“…In one such investigation, Tunnel field effect transistors (TFETs) came into existence which can produce high switching ratio and steeper subthreshold swing (SS) [5][6][7] . However, Silicon (Si) TFETs with SiO 2 as gate oxide, offer poor electrostatics and experimental results show that the on-state currents in TFETs are typically lower than that of MOSFETs [8][9][10][11] . So, with low on-state current as drawback, new configurations, and materials for TFET are proposed, heterojunction tunnel field effect transistor (HTFET), L and U channel TFETs (LTFET & UTFET) and usage of III-V group materials 12,13 for tunneling devices.…”

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confidence: 99%

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Implementation and performance analysis of QPSK system using pocket double gate asymmetric JLTFET for satellite communications

Boggarapu

Lakshmi

2023

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This work is intended to design a quadrature phase shift keying (QPSK) system starting from the device design, characterization and optimization which is then followed by the circuit level implementation and finally the system level configuration. Tunnel Field Effect Transistor (TFET) technology came into existence because of the inability of CMOS (Complementary Metal Oxide Semiconductor) to produce reduced leakage current (Ioff) in the subthreshold regime. With the effects of scaling and requirement of high doping concentrations, TFET is not capable to produce stable reduction in Ioff due to the variation in ON and OFF current. To improve the switching ratio of the current and to obtain good subthreshold swing (SS) by overcoming the limitations of junction TFET, a new device design is proposed for the first time in this work. A pocket double gate asymmetric Junction less TFET (poc-DG-AJLTFET) structure has been proposed in which uniform doping is used to eliminate the junctions and a pocket of length 2 nm made of Silicon–Germanium (SiGe) material has been introduced to improve the designed structure performance in the weak inversion region and increase the drive current (ION). The work function has been tuned to produce the best results for poc-DG-AJLTFET and with our proposed poc-DG-AJLTFET, effects of interface traps are eliminated as against conventional JLTFET structures. The notion that low-threshold voltage device yields high IOFF has been proved wrong with our poc-DG-AJLTFET design, as it produced low threshold voltage with lower IOFF which reduced the power dissipation. Numerical results show that drain induced barrier lowering (DIBL) of 2.75 mV/V is achieved which could be less than 35 times required for short channel effects to be minimum. In terms of gate to drain capacitance (Cgd), it is found that ~ 103 reduction which greatly improves device inertia to internal electrical interference. Also, improvement in transconductance is achieved by 104 times, 103 times improvement in ION/IOFF ratio, and 400 times higher unity gain cutoff-frequency (ft) which would be required by all communication systems. The Verilog models of the designed device are used to construct the leaf cells of quadrature phase shift keying (QPSK) system and the implemented QPSK system is taken as a key evaluator in the performance evaluation in terms of propagation delay and power consumption of poc-DG-AJLTFET in modern satellite communication systems.

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Section: Device Description and Simulationmentioning

confidence: 99%