High Zr doping effects on the microstructural and optical properties of Mn 3  O 4  thin films along with ethanol sensing

Saïd, Lamjed Ben; Inoubli, A.; Bouricha, B.; Amlouk, M.

doi:10.1016/j.saa.2016.08.014

Cited by 34 publications

(18 citation statements)

References 58 publications

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“…Furthermore Figure shows an excellent coincidence with the experimental data and fairly agree with the work reported in literature …”

Section: Resultssupporting

confidence: 92%

“…The fabricated Mn 3 O 4 sensors show high sensitivity toward different concentrations of NH 3 gas as observed in Figure , the sensitivity increases with Ba doping and the best results are achieved in Mn 3 O 4 :Ba1% thin films, this may be due to the porosity nature and high roughness as well as the redshift in band gap, these findings are in good agreement with the work reported in literature …”

Section: Resultssupporting

confidence: 90%

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Structural, Topography, and Optical Properties of Ba‐Doped Mn₃O₄ Thin Films for Ammonia Gas Sensing Application

Najim

Darwoysh

Dawood

et al. 2018

Physica Status Solidi (a)

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The fabrication of reliable and cost‐effective gas sensor for low concentrations of toxic gases such as ammonia is still a challenging task, in this work the authors report structural, topography, and optical properties of pure and Ba‐doped Mn3O4 thin films prepared by chemical spray pyrolysis (CSP) as well as its gas sensing performance toward low concentrations of ammonia gas. XRD analyses prove the films have tetragonal spinel structure with a preferred orientation along the direction (103). AFM and SEM measurements show the films have homogeneous with rough surfaces and porous structures. EDS measurement confirms the presence of Mn, O, and Ba elements according to a doping concentration ratio. Optical measurements show the optical band gap redshifts and the bond length expands as Ba concentration increases. The optimal results are achieved in Mn3O4:Ba1% thin films where porous structure, rough surface, high crystallinity, and maximum response toward (20, 30, 40, and 50 ppm) of ammonia gas with great stability. Empirical equations are suggested to evaluate the sensitivity in terms of relative bond length and RMS roughness. These results show the films are good candidates in p‐type MOS gas sensors.

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“…Furthermore Figure shows an excellent coincidence with the experimental data and fairly agree with the work reported in literature …”

Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 90%

Structural, Topography, and Optical Properties of Ba‐Doped Mn₃O₄ Thin Films for Ammonia Gas Sensing Application

Najim

Darwoysh

Dawood

et al. 2018

Physica Status Solidi (a)

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“…However, when the doping reaches 20 at.%, the resistance increases again which could be explained by the fact that Zr element cannot incorporate into Mn 3 O 4 matrix and it remains as an impurity in various forms of ZrO x or ZrO 2 , which lead (Herodotou et al, 2015;Lv et al, 2008;Paul et al, 2003;Wang et al, 2014). These results are consistent with those found elsewhere (Said et al, 2017) As a matter of fact, the dielectric relaxation time is closely related to the electrical conductivity. Indeed, it is a measure of how long relaxation phenomenon takes to become neutralized by conduction process.…”

Section: The Effect Of Zr Doping In Mn 3 O 4 Thin Filmssupporting

confidence: 86%

“…Following zirconium doping, the appearance of another absorption zone above 2,000 nm for both 3 at.% and 6 at.% Zr doped Mn 3 O 4 samples is also depicted which could be attributed to the appearance of a new Zr level in the band gap energy. This decrease regarding the refractive index n and the extinction coefficient k values after doping are detected suggesting an optical windows application of the Zr doped Mn 3 O 4 thin films as previously shown via photoluminescence study (Said et al, 2017). Outside these absorption zones, since the films are optically transparent in the visible range and for photons energies below the band gap energy (E<E g ), the refractive index n (λ) could be modeled according to Cauchy dispersion expression:…”

Section: Optical Constants By Optical Dispersion Modelsmentioning

confidence: 55%

Electric Conduction Mechanisms Study within Zr Doped Mn₃O₄ Hausmannite Thin Films through an Oxidation Process in Air

Saïd

Boughalmi

Inoubli

et al. 2017

Self Cite

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In this work further optical and electrical investigations of pure and Zr doped Mn 3 O 4 (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ω p , the relaxation time τ and the dielectric constant ε ∞ . Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form Mn 2 O 3 ones at 350°C. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped Mn 3 O 4 thin films in two temperature ranges.

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“…Among p-type systems, Mn 3 O 4 has received significant attention due to its low cost, large natural abundance, environmentally friendly character and versatile chemico-physical properties, including the coexistence of mixed valence states [36,37]. Over the last decade, different studies have reported on Mn 3 O 4 -containing gas sensors for various analytes, including CH 3 CH 2 OH, CH 3 COCH 3 , NH 3 and chemical warfare agent simulants [31,[35][36][37][38][39][40][41]. Nonetheless, only two works on Mn 3 O 4 -based gas sensors for molecular hydrogen detection are available in the literature so far [35,42], and the implementation of H 2 sensors endowed with improved sensitivity and selectivity undoubtedly requires additional research efforts [29,35,37,38].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen Gas Sensing Performances of p-Type Mn3O4 Nanosystems: The Role of Built-in Mn3O4/Ag and Mn3O4/SnO2 Junctions

et al. 2020

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Among oxide semiconductors, p-type Mn3O4 systems have been exploited in chemo-resistive sensors for various analytes, but their use in the detection of H2, an important, though flammable, energy vector, has been scarcely investigated. Herein, we report for the first time on the plasma assisted-chemical vapor deposition (PA-CVD) of Mn3O4 nanomaterials, and on their on-top functionalization with Ag and SnO2 by radio frequency (RF)-sputtering, followed by air annealing. The obtained Mn3O4-Ag and Mn3O4-SnO2 nanocomposites were characterized by the occurrence of phase-pure tetragonal α-Mn3O4 (hausmannite) and a controlled Ag and SnO2 dispersion. The system functional properties were tested towards H2 sensing, yielding detection limits of 18 and 11 ppm for Mn3O4-Ag and Mn3O4-SnO2 specimens, three orders of magnitude lower than the H2 explosion threshold. These performances were accompanied by responses up to 25% to 500 ppm H2 at 200 °C, superior to bare Mn3O4, and good selectivity against CH4 and CO2 as potential interferents. A rationale for the observed behavior, based upon the concurrence of built-in Schottky (Mn3O4/Ag) and p-n junctions (Mn3O4/SnO2), and of a direct chemical interplay between the system components, is proposed to discuss the observed activity enhancement, which paves the way to the development of gas monitoring equipments for safety end-uses.

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High Zr doping effects on the microstructural and optical properties of Mn 3 O 4 thin films along with ethanol sensing

Cited by 34 publications

References 58 publications

Structural, Topography, and Optical Properties of Ba‐Doped Mn₃O₄ Thin Films for Ammonia Gas Sensing Application

Structural, Topography, and Optical Properties of Ba‐Doped Mn₃O₄ Thin Films for Ammonia Gas Sensing Application

Electric Conduction Mechanisms Study within Zr Doped Mn₃O₄ Hausmannite Thin Films through an Oxidation Process in Air

Hydrogen Gas Sensing Performances of p-Type Mn3O4 Nanosystems: The Role of Built-in Mn3O4/Ag and Mn3O4/SnO2 Junctions

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High Zr doping effects on the microstructural and optical properties of Mn 3 O 4 thin films along with ethanol sensing

Cited by 34 publications

References 58 publications

Structural, Topography, and Optical Properties of Ba‐Doped Mn3O4 Thin Films for Ammonia Gas Sensing Application

Structural, Topography, and Optical Properties of Ba‐Doped Mn3O4 Thin Films for Ammonia Gas Sensing Application

Electric Conduction Mechanisms Study within Zr Doped Mn3O4 Hausmannite Thin Films through an Oxidation Process in Air

Hydrogen Gas Sensing Performances of p-Type Mn3O4 Nanosystems: The Role of Built-in Mn3O4/Ag and Mn3O4/SnO2 Junctions

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Structural, Topography, and Optical Properties of Ba‐Doped Mn₃O₄ Thin Films for Ammonia Gas Sensing Application

Structural, Topography, and Optical Properties of Ba‐Doped Mn₃O₄ Thin Films for Ammonia Gas Sensing Application

Electric Conduction Mechanisms Study within Zr Doped Mn₃O₄ Hausmannite Thin Films through an Oxidation Process in Air