High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy

Basset, Francesco Basso; Bietti, Sergio; Reindl, Marcus; Esposito, Luca; Fedorov, Alexey; Huber, Daniel; Rastelli, Armando; Bonera, Emiliano; Trotta, Rinaldo; Sanguinetti, S.

doi:10.1021/acs.nanolett.7b04472

Cited by 49 publications

(39 citation statements)

References 65 publications

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“…Here, we extend the droplet epitaxy scheme to achieve a purely 1.55 µm photon emission. We introduce the high temperature crystallization protocol, which has recently been applied to the GaAs material system 17,18 , to the InAs/InP material system in order to improve the a) Electronic mail: ha.neul@nims.go.jp b) Electronic mail: kuroda.takashi@nims.go.jp dot morphology property. The use of a state-of-the-art superconducting photon detector, together with an efficient dot sample, allows us to investigate single photon emission dynamics in the standard telecom C-band.…”

mentioning

confidence: 99%

Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm

Ha¹,

Mano²,

Dubos³

et al. 2020

Appl. Phys. Express

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We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 µm telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs. This is the version of the article before peer review, as submitted to Applied Physics Express. The final published version will be available as an Open Access article from the journal's site.A source of single photons and quantum entangled photon pairs is a key device in vast quantum technologies. Semiconductor quantum dots are expected to serve as photon sources that can be operated very efficiently and deterministically. Numerous efforts have already been made to develop a practical quantum dot photon source. However, photon emission in the standard telecom band, particularly around a wavelength of 1.55 µm, which is the maximum transmission window of silica optical fibers, is a material challenge. Careful growth optimization is required to achieve a 1.55 µm emission 1-10 . Nevertheless, the well-known quantum dot growth based on the Stranski-Krastanow mode leads to an asymmetric dot shape, which is not favorable for entangled pair generation.The problem is ideally solved by using droplet epitaxy, which offers considerable freedom regarding the choice of materials and substrates 11 . The application of a C 3v symmetric (111)A surface to the growth substrate results in the creation of almost perfectly symmetric quantum dots, which can work in both the visible wavelength region 12,13 and the infrared telecom wavelength region 14,15 . Recently, the emission wavelength has been extended beyond 1.5 µm for InAs dots embedded in InAlGaAs on InP(111)A 16 . However, the previous samples were not sufficiently optimized: the dot density was too high for a single quantum dot to be isolated using standard micro optics. Moreover, the dot size distribution is relatively large so that careful dot selection is required to find a dot that emits at 1.55 µm.Here, we extend the droplet epitaxy scheme to achieve a purely 1.55 µm photon emission. We introduce the high temperature crystallization protocol, which has recently been applied to the GaAs material system 17,18 , to the InAs/InP material system in order to improve the a) Electronic mail: ha.neul@nims.go.jp b) Electronic mail: kuroda.takashi@nims.go.jp FIG. 1. (Color online) (b) The luminescence spectra of a large ensemble of InAs quantum dots in In0.52Al0.12Ga0.36As /InP(111)A at 12 K at different excitation powers. (b) The luminescence spectra of a single isolated InAs dot with a cw excitation of 40 nW. We focus on this dot in our time-resolved study. The inset shows an atomic fo...

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mentioning

confidence: 99%

Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm

Ha¹,

Mano²,

Dubos³

et al. 2020

Appl. Phys. Express

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“…The growth of QDs has been intensively studied employing scanning probe microscopy [34][35][36][37][38][39][40][41][42] . Aiming at entangled photon-pair generation, a connection between such an analysis and the optical properties [43][44][45] has focused mostly on the fine-structure splitting of the QDemission [46][47][48][49][50][51][52][53] . To tailor all the optical QD-properties, it is important to understand how they are connected to the QD-growth 36 .…”

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confidence: 99%

Correlations between optical properties and Voronoi-cell area of quantum dots

et al. 2019

Self Cite

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A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over µm-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved. arXiv:1902.10145v3 [cond-mat.mes-hall]

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“…followed up a modified method based on a high‐temperature DE growth scheme on a GaAs (111)A substrate to further improve the yield of entanglement‐ready photon sources up to 95%. Atomic‐force microscopy (AFM) images and height profile of typical DE‐QDs are shown in Figure a–c . To serve for long‐distance fiber‐based quantum key distribution, this growth scheme was extended to produce InAs/InP DE QDs for single and entangled photon emissions in the O (1310 nm) and C (1550 nm) telecom bands that have been reported using MOVPE.…”

Section: Advanced Epitaxial Growth Technology For Novel Single Qdsmentioning

confidence: 99%

“…a–c) A 1 µm × 1 µm AFM scan of a quantum dot (QD) sample, along with a close‐up atomic force microscopy (AFM) map (b) and height profiles (c) of a typical single QD. Reproduced with permission . Copyright 2017, American Chemical Society.…”

Section: Advanced Epitaxial Growth Technology For Novel Single Qdsmentioning

confidence: 99%

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Zhao

Chen

et al. 2019

Adv Quantum Tech

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Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on‐demand generation of single‐photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. This review is focused on the latest significant progress of QD photonic devices. First, advanced technologies in QD growth are discussed, with special attention to droplet epitaxy and site‐controlled QDs. Then, the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques is overviewed. The discussion is extended to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light‐emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.

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High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy

Cited by 49 publications

References 65 publications

Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm

Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm

Correlations between optical properties and Voronoi-cell area of quantum dots

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

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