High-Voltage p-Channel Level Shifter Using Charge-Controlled Self-Isolation Structure

Abstract

In this paper, we report an area-effective 600 V p-channel level shifter using a self-isolation structure without the degradation of blocking capability for the first time. To prevent the degradation of high-voltage isolation performance, the charge in a double reduced surface electric field (RESURF) structure is controlled at the border region between a high-voltage p-channel metal oxide semiconductor field effect transistor (MOSFET) and a high-voltage isolation region. Because of a divided p-offset region in the drift region of the high-voltage p-channel MOSFET and the high-voltage isolation region, parasitic current to the ground (GND) terminal through the isolation region can be ignored. By using the new high-voltage p-channel level shifter, a 400 V level shift operation is confirmed.