High-voltage monolithic 3D capacitors based on through-silicon-via technology

Gruenler, Saeideh; Rattmann, Gudrun; Erlbacher, Tobias; Bauer, Anton J.; Frey, L.

doi:10.1109/iitc-mam.2015.7325655

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/ 2015

DOI: 10.1109/iitc-mam.2015.7325655

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High-voltage monolithic 3D capacitors based on through-silicon-via technology

Saeideh Gruenler

Gudrun Rattmann

Tobias Erlbacher

et al.

Abstract: Keywords- A. Fabrication approachΩcm are utilized. After removal of the oxide on the 253 978-1-4673-7356-2/15/$31.00 ©2015 IEEE

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High-voltage monolithic 3D capacitors based on through-silicon-via technology

Abstract: Keywords- A. Fabrication approachΩcm are utilized. After removal of the oxide on the 253 978-1-4673-7356-2/15/$31.00 ©2015 IEEE

Cited by 0 publications

References 3 publications

No citations

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