High Voltage LDMOS Transistors utilizing a Triple Well Architecture

High-voltage (100 V) Chipfilm<sup>TM</sup> single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

“…RESURF technique (Ludikhuize, 2000) further enhances the efficiency of the device by increasing the breakdown voltage level. Other approaches could also be used for increasing the breakdown voltage and reduce the on-resistance R on , such as double RESURF technique by using internal field rings, buried layers, triple well architecture and super-junction LDMOS transistors (Hossain et al, 2002;Nezar and Salama, 1991;Liaw et al, 2007;Puchner et al, 2007;Park and Salama, 2006). In literature, one can also find thin-film single-crystal silicon LDMOS structures but they use either Silicon on Insulator (SOI) (Akarvardar et al, 2007;Luo et al, 2003;Bawedin et al, 2004) or Silicon on Sapphire (SOS) (Roig et al, 2004) technologies.…”