Analog Circuit Design 2004
DOI: 10.1007/978-1-4020-2805-2_9
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High Voltage Devices for RF Power Amplifiers: An Advantage?

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“…Manufacturers strive for a single-chip solution using a CMOS-based technology for cost reasons [15,19]. The main advantages of using power devices for the RF power amplifier with operating voltages well above the CMOS level (typically 3.3 V or below) arises from the reduction of device current for the required output power of 1-3 W. This would both minimize electromigration effects through the metallization layers and the impact of parasitic inductances [20]. Therefore, it can be expected that the trend towards a fully integrated fabrication with LDMOS transistors will also be used in RF power amplifiers for mobile phones in the near future.…”
Section: Impact On Information Technologiesmentioning
confidence: 99%
“…Manufacturers strive for a single-chip solution using a CMOS-based technology for cost reasons [15,19]. The main advantages of using power devices for the RF power amplifier with operating voltages well above the CMOS level (typically 3.3 V or below) arises from the reduction of device current for the required output power of 1-3 W. This would both minimize electromigration effects through the metallization layers and the impact of parasitic inductances [20]. Therefore, it can be expected that the trend towards a fully integrated fabrication with LDMOS transistors will also be used in RF power amplifiers for mobile phones in the near future.…”
Section: Impact On Information Technologiesmentioning
confidence: 99%