2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515) 2003
DOI: 10.1109/nssmic.2003.1351918
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High voltage amplifier

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“…A frequency-doubled pulsed Nd:YAG laser (532 nm and 30 mJ/pulse) irradiated the sample from the backside of the wafer. Desorbed charged particles were captured by the ion trap driven by a home-built audio frequency power amplifier (in a bipolar mode with voltage stability better than 100 ppm) and damped to the trap center by helium buffer gas (∼1 mTorr). The typical laser power density used was ∼1 × 10 8 W/cm 2 , which created a visible laser-ablated spot on the Si wafer.…”
Section: Methodsmentioning
confidence: 99%
“…A frequency-doubled pulsed Nd:YAG laser (532 nm and 30 mJ/pulse) irradiated the sample from the backside of the wafer. Desorbed charged particles were captured by the ion trap driven by a home-built audio frequency power amplifier (in a bipolar mode with voltage stability better than 100 ppm) and damped to the trap center by helium buffer gas (∼1 mTorr). The typical laser power density used was ∼1 × 10 8 W/cm 2 , which created a visible laser-ablated spot on the Si wafer.…”
Section: Methodsmentioning
confidence: 99%