High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiO_xPassivation

Abstract

-We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 µA/mm and that of the conventional device was 1116.7 µA/mm. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.

Pulse-Mode DynamicRonMeasurement of Large-Scale High-Power AlGaN/GaN HFET

“…However, the developed GaN devices generate a dynamic problem that differs from the DC characteristics of real-field applications, and advanced research groups are making an effort to solve this dynamic problem [10], [11].…”

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

“…In recent studies, most of attention has been drawn to either silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) or high electron mobility transistors (HEMTs) [7][8][9][10][11][12]. However, the continuous developments of SiC MOSFETs and GaN HEMTs have been hindered by their own limits.…”