High voltage (4kV) emitter short type diode (ESD)

Kitagawa, M.; Matsushita, Kohji; Nakagawa, Akio

doi:10.1109/ispsd.1992.991238

Cited by 11 publications

(1 citation statement)

References 5 publications

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“…Because of the poor switching characteristics at high voltages, such as large reverse recovery peak current and long reverse recovery time, the application of P-i-N diodes in high-frequency circuits is limited [2][3][4] . In addition, the conduction losses caused by diodes occupy a large portion of the switching losses in high-voltage switching devices (e.g., IGBTs, IEGTs, GTOs) [5][6][7] . In order to obtain better soft recovery characteristics, the carrier concentration in the end of reverse recovery process can be adjusted by improving the cathode structure [8] .…”

Section: Introductionmentioning

confidence: 99%

Asymmetric anode and cathode extraction structure fast recovery diode

Xie¹,

Ma²,

Gao³

2018

J. Semicond.

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This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%.

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