High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

Faure‐Vincent, Jérôme; Tiuşan, C.; Jouguelet, E.; Canet, F.; Sajieddine, M.; Bellouard, C.; Popova, E.; Hehn, M.; Montaigne, F.; Schuhl, A.

doi:10.1063/1.1586785

Cited by 160 publications

(98 citation statements)

References 14 publications

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“…It is in turn the strong spin polarization of D 1 electrons at the Fermi level E F in bcc-oriented Fe, Co, FeCo and FeCoB alloys that leads to predicted TMR values of 10,000%. Experimentally, beyond initial experiments that confirm this band structure mechanism of spin-polarized solid-state tunnelling [38][39][40][41][42] , TMR values that reach 1,100% (600%) at low (room) temperature 43 confirm the broad outlines of this theoretical backdrop.…”

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confidence: 50%

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

et al. 2014

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Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics.

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confidence: 50%

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

et al. 2014

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“…In 2003, TMR values of 100% at low temperature and 67% at room temperature were achieved [28] the range of 200% at room temperature were announced [29,30] using both MBE grown Fe-MgO-Fe [29] and sputtered CoFe-MgO-CoFe [30]. The current record (in late 2007) seems to be 1010% at low temperature and 500% at room temperature [31].…”

Section: Experimental Confirmationmentioning

confidence: 94%

Tunneling magnetoresistance from a symmetry filtering effect

Butler

2008

Science and Technology of Advanced Materials

135

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“…Recently, measurements on epitaxial Fe/MgO/Fe junctions have shown large TMR effects, 27,28 from which a polarization can be estimated using the Julliere formula 29…”

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confidence: 99%