High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Chen, Q.; Yang, Jinwei; Kahn, Mathias; Ping, A. T.; Adesida, I.

doi:10.1049/el:19970933

Cited by 39 publications

(9 citation statements)

References 4 publications

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“…An improved g m0 values were observed from high crystalline quality AlGaN/GaN HEMTs [11]. The high value of g m0 is due to high crystalline quality of AlGaN/GaN HEMTs [9,11,12]. Correspondingly, we have also demonstrated high 2DEG mobility from AlGaN/GaN HEMT structure.…”

Section: Device Resultssupporting

confidence: 60%

AlGaN/GaN high‐electron‐mobility transistors on sapphire with Fe‐doped GaN buffer layer by MOVPE

Aggerstam

Sjödin

Lourdudoss

2006

Phys. Status Solidi (c)

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A simple AlGaN/GaN HEMT structure without any interlayer on Fe-doped GaN (GaN:Fe) grown by LP-MOVPE in one single run on sapphire is demonstrated. The surface segregation of Fe in GaN occurring during growth is identified. Hall measurements yield 2DEG (two dimensional electron gas) mobilities of 1700 and 10700 cm 2 /Vs and sheet carrier concentrations of 5.1x1012 and 5.7x10 12 cm -2 at 300 K and 20 K, respectively. Good pinch-off current-voltage (I D -V D ) characteristics is observed from AlGaN/GaN HEMTs. A maximum drain current density of 0.6 A/mm and a peak extrinsic transconductance of 200 mS/mm have been observed. The HEMT structure yields very good device isolation as indicated by an isolation current of ≤1 nA at 20 V.

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Section: Device Resultssupporting

confidence: 60%

AlGaN/GaN high‐electron‐mobility transistors on sapphire with Fe‐doped GaN buffer layer by MOVPE

Aggerstam

Sjödin

Lourdudoss

2006

Phys. Status Solidi (c)

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“…These gallium materials in different morphologies have enlightened ample of applications e.g. High electron mobility transistors (HEMTs) 10 , UV-Blue light emitting diode and laser diodes 11 , logic gates 12 13 , field effect transistors (FET) 14 and gas sensing devices 15 . Despite of their diverse applications, very limited gallium oxynitride (GaON) compounds have been reported for solar water splitting studies 16 17 .…”

mentioning

confidence: 99%

Sonochemical Assisted Solvothermal Synthesis of Gallium Oxynitride Nanosheets and their Solar-Driven Photoelectrochemical Water-Splitting Applications

Iqbal

Khan

Yamani

et al. 2016

Sci Rep

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Gallium oxynitride (GaON) nanosheets for photoelectrochemical (PEC) analysis are synthesized via direct solvothermal approach. Their FE-SEM revealed nanosheets morphology of GaON prepared at a reaction time of 24 hours at 180 °C. The elemental composition and mapping of Ga, O and N are carried out through electron dispersive X-ray spectroscopy (EDX). The cubic structure of GaON nanosheets is elucidated by X-ray diffraction (XRD)analysis. The X-ray Photoelectron Spectroscopy (XPS) further confirms Ga, O and N in their respective ratios and states. The optical properties of GaON nanosheets are evaluated via UV-Visible, Photoluminescence (PL) and Raman spectroscopy’s. The band gap energy of ~1.9 eV is calculated from both absorption and diffused reflectance spectroscopy’s which showed stronger p-d repulsions in the Ga (3d) and N (2p) orbitals. This effect and chemical nitridation caused upward shift of valence band and band gap reduction. The GaON nanosheets are investigated for PEC studies in a standard three electrode system under 1 Sun irradiation in 0.5 M Na2SO4. The photocurrent generation, oxidation and reduction reactions during the measurements are observed by Chronoampereometry, linear sweep Voltametry (LSV) and Cyclic Voltametry (CV) respectively. Henceforward, these GaON nanosheets can be used as potential photocatalyts for solar water splitting.

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“…Record microwave power of 6.8 W/mm, 1 as well as high-temperature 2,3 and low-noise performance 4 of AlGaN/GaN heterostructure field effect transistors ͑HFETs͒ have been demonstrated. The combination of superior electron transport in GaN 5 with excellent thermal properties of SiC provides the key to enhanced current-carrying capability 6 and reduced self-heating effects 7 in GaN-based devices. However, the microwave power levels achieved are still far below what is expected from dc performance of GaN-based devices.…”

mentioning

confidence: 99%

Lattice and energy band engineering in AlInGaN/GaN heterostructures

Khan

Yang

Simin

et al. 2000

Applied Physics Letters

150

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High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Cited by 39 publications

References 4 publications

AlGaN/GaN high‐electron‐mobility transistors on sapphire with Fe‐doped GaN buffer layer by MOVPE

AlGaN/GaN high‐electron‐mobility transistors on sapphire with Fe‐doped GaN buffer layer by MOVPE

Sonochemical Assisted Solvothermal Synthesis of Gallium Oxynitride Nanosheets and their Solar-Driven Photoelectrochemical Water-Splitting Applications

Lattice and energy band engineering in AlInGaN/GaN heterostructures

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